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2SK560

Description
HIGH SPEED POWER SWITCHING
CategoryDiscrete semiconductor    The transistor   
File Size50KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SK560 Overview

HIGH SPEED POWER SWITCHING

2SK560 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)15 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
surface mountNO
Base Number Matches1

2SK560 Related Products

2SK560 2SK559
Description HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 15 A 15 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 100 W 100 W
surface mount NO NO
Base Number Matches 1 1

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