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2SC1645

Description
2SC1545M
CategoryDiscrete semiconductor    The transistor   
File Size100KB,1 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SC1645 Overview

2SC1545M

2SC1645 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage32 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)5000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1

2SC1645 Related Products

2SC1645 2SC1545M
Description 2SC1545M 2SC1545M
Is it Rohs certified? conform to conform to
package instruction CYLINDRICAL, O-PBCY-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.3 A 1.5 A
Collector-emitter maximum voltage 32 V 32 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 5000 5000
JESD-30 code O-PBCY-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR
Package form CYLINDRICAL IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
Base Number Matches 1 1

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