Field Effect Transistor Silicon N Channel MOS Type
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Parts packaging code | TO-3PN |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 2 |
Reach Compliance Code | unknow |
Shell connection | DRAIN |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 800 V |
Maximum drain current (ID) | 9 A |
Maximum drain-source on-resistance | 1.2 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 150 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |