2SA1199S datasheet, PDF - EEWORLD Datasheet

2SA1199S: DescriptionTRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size120KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SA1199S Overview

TRANSISTORS

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	270
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	NOT SPECIFIED
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

This Material Copyrighted By Its Respective Manufacturer

	2SA1199S	2SA1199
Description	TRANSISTORS	TRANSISTORS
Is it Rohs certified?	conform to	conform to
package instruction	IN-LINE, R-PSIP-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	unknow
Maximum collector current (IC)	0.7 A	0.7 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	270	120
JESD-30 code	R-PSIP-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND
Package form	IN-LINE	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.4 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz

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