SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
A
S
KTA1725
EPITAXIAL PLANAR PNP TRANSISTOR
C
・Suffix
U : Qualified to AEC-Q101.
ex) KTA1725-U/PU
K
L
M
D
D
L
R
G
FEATURES
・
Complementary to KTC4511.
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-80
-80
-6
-6
-3
30
150
-55½150
UNIT
V
V
V
A
A
W
℃
℃
1
N
N
MILLIMETERS
_
10.0 + 0.3
_
15.0 + 0.3
_
2.70 + 0.3
0.76+0.09/-0.05
_
Φ3.2
+ 0.2
_
3.0 + 0.3
_
12.0 + 0.3
0.5+0.1/-0.05
_
13.6 + 0.5
_
3.7 + 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54 + 0.1
_
6.8 + 0.1
_
4.5 + 0.2
_
2.6 + 0.2
0.5 Typ
F
J
B
P
H
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=-80V, I
E
=0
V
EB
=-6V, I
C
=0
I
C
=-25mA, I
B
=0
V
CE
=-4V, I
C
=-2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-12V, I
C
=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
-80
55
-
-
-
TYP.
-
-
-
-
-
20
150
MAX.
-10
-10
-
160
-0.5
-
-
V
MHz
pF
UNIT
μ
A
μ
A
V
R:55~110, O:80~160.
2018. 04. 10
Revision No : 2
1/3
KTA1725
I
C
- V
CE
COLLECTOR CURRENT I C (A)
20
=-
0
mA
V
CE(sat)
- I
B
I
C
=-100mA
I =-80mA
C
-
I
C
=
mA
150
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-6
-3
-4
I
C
=-50mA
I
C
=-30mA
-2
-2
I
C
=-20mA
I
C
=-10mA
-1
I
C
=-2A
I
C
=-4A
I
C
=-6A
0
0
-1
-2
-3
-4
0
0
-0.5
-1.0
-1.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
BASE CURRENT I
B
(A)
I
C
- V
BE
-6
COLLECTOR CURRENT I
C
(A)
V
CE
=-4V
h
FE
- I
C
1k
DC CURRENT GAIN h
FE
500
300
Tc=125 C
Tc=25 C
V
CE
=-4V
-4
100
50
30
Tc=-30 C
Tc
=1
25
C
Tc
=2
5
C
0
Tc=
-30
C
-2
0
-1
BASE-EMITTER VOLTAGE V
BE
(V)
-1.5
10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I
C
(A)
h
FE
- I
C
1k
V
CE
=-4V
DC CURRENT GAIN h
FE
500
300
Tc=125 C
Tc=25 C
Tc=-30 C
R
th
- t
TRANSIENT THERMAL RESISTANCE
r
th
( C/W)
1k
1
NO HEAT SINK
2
INFINITE SINK
100
1
100
50
30
10
2
1
10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
0.1
0.001
0.01
0.1
1
TIME t (S)
10
100
1k
COLLECTOR CURRENT I
C
(A)
2018. 04. 10
Revision No : 2
2/3
KTA1725
f
T
- I
E
30
CUT-OFF FREQUENCY f
T
(MHz)
V
CE
=-12V
C
5
12
=
Tc
5 C
=2
Tc
C
-30
c=
T
SAFE OPERATING AREA
-30
COLLECTOR CURRENT I
C
(A)
-10
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-3
I
C
MAX.(PULSED)
20
100ms*
DC
(T
c=
10
ms
25
C)
*
10
0
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
EMITTER CURRENT I
E
(A)
*SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Pc - Ta
MAXIMUM POWER DISSIPATION P
C
(W)
-40
-30
-25
-20
-15
-10
-5
0
0
25
50
(2)
(1)
(1)Tc=Ta
INFINITE HEAT SINK
(2)NO HEAT SINK
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2018. 04. 10
Revision No : 2
3/3
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