IXGN50N60BD3 datasheet, PDF - EEWORLD Datasheet

IXGN50N60BD3: Description75 A, 600 V, N-CHANNEL IGBT; Categorysemiconductor Discrete semiconductor; File Size147KB，5 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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75 A, 600 V, N-CHANNEL IGBT

Parameter Name	Attribute value
Number of terminals	4
Rated off time	200 ns
Maximum collector current	75 A
Maximum Collector-Emitter Voltage	600 V
Processing package description	MINIBLOC-4
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	UNSPECIFIED
terminal coating	nickel
Terminal location	UPPER
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	isolation
Number of components	1
transistor applications	POWER control
Transistor component materials	silicon
Channel type	N channel
Transistor type	INSULATED GATE BIPOLAR
Rated on time	50 ns

	IXGN50N60BD3	IXGN50N60BD2
Description	75 A, 600 V, N-CHANNEL IGBT	75 A, 600 V, N-CHANNEL IGBT
Number of terminals	4	4
Rated off time	200 ns	200 ns
Maximum collector current	75 A	75 A
Maximum Collector-Emitter Voltage	600 V	600 V
Processing package description	MINIBLOC-4	MINIBLOC-4
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	ACTIVE	EOL/LIFEBUY
packaging shape	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting
Terminal form	UNSPECIFIED	UNSPECIFIED
terminal coating	nickel	nickel
Terminal location	UPPER	UPPER
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	isolation	isolation
Number of components	1	1
transistor applications	POWER control	POWER control
Transistor component materials	silicon	silicon
Channel type	N channel	N channel
Transistor type	INSULATED GATE BIPOLAR	INSULATED GATE BIPOLAR
Rated on time	50 ns	50 ns

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