HYS64D32020GDL-6-B datasheet, PDF

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HYS64D32020GDL-6-B: Description16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200; Categorystorage storage; File Size430KB，31 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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HYS64D32020GDL-6-B Overview

16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200

HYS64D32020GDL-6-B Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	MODULE
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	compli
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N200
memory density	2147483648 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.072 A
Maximum slew rate	1.536 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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D a t a S h e e t , V 1 . 2 , A u g . 2 00 3

H Y S 64 D 3 2 0 2 0 G D L – [ 5 / 6 / 7 / 8 ] – B

H Y S 64 D 1 6 0 0 x G D L – [ 6 / 7 / 8 ] – B

200- Pi n Small Outli ne Dual -In- Line Memor y Modules

S O -D I M M

DDR SDRAM

M e m or y P r o du c t s

N e v e r

s t o p

t h i n k i n g .

HYS64D32020GDL-6-B Related Products

	HYS64D32020GDL-6-B	HYS64D16000GDL-6-B	HYS64D16000GDL-7-B	HYS64D16000GDL-8-B	HYS64D16001GDL-6-B	HYS64D16001GDL-7-B	HYS64D32020GDL	HYS64D32020GDL-5-B	HYS64D32020GDL-7-B	HYS64D32020GDL-8-B
Description	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200	16M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
memory width	64	64	64	64	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200	200	200	200	200
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 Cel	70 °C	70 °C	70 °C
organize	32MX64	16MX64	16MX64	16MX64	16MX64	16MX64	16M X 64	32MX64	32MX64	32MX64
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible	-	-	incompatible	-	incompatible
Maker	Infineon	Infineon	-	Infineon	Infineon	Infineon	-	Infineon	Infineon	Infineon
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	-	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	-	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Contacts	200	200	200	200	200	200	-	200	200	200
Reach Compliance Code	compli	compli	unknown	compli	compli	unknow	-	compli	unknow	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.7 ns	0.7 ns	0.75 ns	0.8 ns	0.7 ns	0.75 ns	-	0.6 ns	0.75 ns	0.8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz	166 MHz	143 MHz	125 MHz	166 MHz	143 MHz	-	200 MHz	143 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	-	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
memory density	2147483648 bi	1073741824 bi	1073741824 bit	1073741824 bi	1073741824 bi	1073741824 bi	-	2147483648 bi	2147483648 bi	2147483648 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	-	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
word count	33554432 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	-	33554432 words	33554432 words	33554432 words
character code	32000000	16000000	16000000	16000000	16000000	16000000	-	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	-	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	-	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	NOT SPECIFIED
power supply	2.5 V	2.6 V	2.5 V	2.5 V	2.6 V	2.5 V	-	2.6 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	-	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES	-	YES	YES	YES
Maximum slew rate	1.536 mA	1.14 mA	0.94 mA	0.88 mA	1.14 mA	0.94 mA	-	1.536 mA	1.18 mA	1.08 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	-	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	-	2.5 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-	2.6 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO	-	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	-	0.6 mm	0.6 mm	0.6 mm
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	NOT SPECIFIED

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