HB52RD328DC-A6F datasheet, PDF

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HB52RD328DC-A6F: DescriptionSynchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144; Categorystorage storage; File Size885KB，68 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB52RD328DC-A6F Overview

Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144

HB52RD328DC-A6F Parametric

Parameter Name	Attribute value
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	2147483648 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.032 A
Maximum slew rate	2.048 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
Base Number Matches	1

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HB52RD328DC-F

256 MB Unbuffered SDRAM S.O.DIMM

32-Mword

64-bit, 100 MHz Memory Bus, 2-Bank Module

(32 pcs of 16 M

4 components)

PC100 SDRAM

ADE-203-1044B (Z)

Rev. 1.0

Jan. 18, 2000

Description

The HB52RD328DC is a 16M

2 banks Synchronous Dynamic RAM Small Outline Dual In-line

Memory Module (S.O.DIMM), mounted 32 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP

package and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of the

product is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, it makes high density

mounting possible without surface mount technology. It provides common data inputs and outputs.

Decoupling capacitors are mounted beside TCP on the module board.

Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would

be electrical defects.

Features

•

Fully compatible with : JEDEC standard outline 8-byte S.O.DIMM

•

144-pin Zig Zag Dual tabs socket type (dual lead out)



Outline: 67.60 mm (Length)

31.75 mm (Height)

3.80 mm (Thickness)



Lead pitch: 0.80 mm

•

3.3 V power supply

•

Clock frequency: 100 MHz (max)

•

LVTTL interface

•

Data bus width:

64 Non parity

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length : 1/2/4/8/full page

HB52RD328DC-A6F Related Products

	HB52RD328DC-A6F	HB52RD328DC-B6F	HB52RD328DC-B6FL	HB52RD328DC-A6FL
Description	Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144
Parts packaging code	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	144	144	144	144
word count	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	65 °C	65 °C	65 °C	65 °C
organize	32MX64	32MX64	32MX64	32MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096
self refresh	YES	YES	YES	YES
Maximum standby current	0.032 A	0.032 A	0.032 A	0.032 A
Maximum slew rate	2.048 mA	2.048 mA	2.048 mA	2.048 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	-

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