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HY27SF081G2M-TPIB

Description
128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
Categorystorage    storage   
File Size487KB,48 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
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HY27SF081G2M-TPIB Overview

128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48

HY27SF081G2M-TPIB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSK Hynix
Parts packaging codeTSOP1
package instructionTSOP1, TSSOP48,.8,20
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time30 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
JESD-609 codee6
length18.4 mm
memory density1073741824 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1K
Number of terminals48
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size2K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
switch bitNO
typeSLC NAND TYPE
width12 mm
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