HUFA76645P3 datasheet, PDF - EEWORLD Datasheet

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HUFA76645P3: Description75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size216KB，10 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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HUFA76645P3 Overview

75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

HUFA76645P3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	75 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	310 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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HUFA76645P3, HUFA76645S3S

Data Sheet

January 2002

75A, 100V, 0.015 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

(FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

Features

• Ultra Low On-Resistance

- r

DS(ON)

= 0.014Ω,

10V

- r

DS(ON)

= 0.015Ω,

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

Curves

HUFA76645P3

HUFA76645S3S

Symbol

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

76645P

76645S

HUFA76645P3

HUFA76645S3S

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUFA76645S3ST.

= 25

C, Unless Otherwise Specified

HUFA76645P3,

HUFA76645S3S

UNITS

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

= 25

C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T

= 25

C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T

= 100

C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T

= 100

C, V

= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

NOTES:

1. T

= 25

C to 150

100

±16

Figure 4

Figures 6, 17, 18

310

2.07

-55 to 175

300

260

CAUTION:

Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUFA76645P3, HUFA76645S3S Rev. B

HUFA76645P3 Related Products

	HUFA76645P3	HUFA76645S3S
Description	75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET	75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Is it Rohs certified?	conform to	conform to
Maker	Fairchild	Fairchild
Reach Compliance Code	unknown	_compli
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (Abs) (ID)	75 A	75 A
Maximum drain current (ID)	75 A	75 A
Maximum drain-source on-resistance	0.015 Ω	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	310 W	310 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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