Product Data Sheet
January 10, 2005
6 - 18 GHz High Power Amplifier
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TGA9092-SCC
Dual Channel Power Amplifier
0.25um pHEMT Technology
6-18 GHz Frequency Range
2.8 W/Channel Midband Pout
5.6 W Pout Combined
24 dB Nominal Gain
Balanced In/Out for Low VSWR
8V @ 1.2A per Channel Bias
Key Features and Performance
Primary Applications
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•
X-Ku band High Power
VSAT
36
Chip Dimensions 5.739 mm x 4.318 mm x 0.1016 mm
Pout @ P2dB (dBm)
35
34
33
32
31
30
29
28
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Product Description
The TriQuint TGA9092-SCC is a dual channel, three-
stage wide band HPA MMIC designed using TriQuint’s
proven 0.25
µm
Power pHEMT process to support a
variety of high performance applications including
military EW programs, VSAT, and other applications
requiring wideband high power performance.
Each amplifier channel consists of one 1200
µm
input
device driving a 2400
µm
intermediate stage which
drives a 4800 um output stage.
The TGA9092-SCC provides a nominal 34 dBm of
output power at 2dB gain compression across the 6-18
GHz range per channel . Power combined, nominal
output power of 36.5 dBm can be expected with low
loss external couplers. Typical per channel small
signal gain is 24 dB. Typical single-ended Input/Output
RL is 6-8 dB across the band.
The TGA9092-SCC is 100% DC and RF tested on-
wafer to ensure performance compliance. The device
is available in chip form.
Typical Measured Pout (RF Probe)
27
26
25
24
23
Gain (dB)
22
21
20
19
18
17
16
15
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Typical Measured Small Signal Gain
1
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE I
MAXIMUM RATINGS
Symbol
V
+
V
-
I
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
Parameter 5/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
9V
-5V TO 0V
3.5 A
84.48 mA
26 dBm
28.8 W
150
0
C
320
0
C
-65 to 150
0
C
4/
3/ 4/
1/ 2/
4/
Notes
4/
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
When operated at this bias condition with a base plate temperature of 70
0
C, the median
life is reduced from 1.6 E+6 to 5.4 E+4 hours.
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
These ratings represent the maximum operable values for this two-channel device.
3/
4/
5/
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
2
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE II
DC PROBE TEST
(TA = 25
°C ±
5
°C)
Symbol
Imax
(Q1)
Gm
(Q1)
V
P
BVGS
BVGD
Parameter
Maximum Current
Transconductance
Pinch-off Voltage
Breakdown Voltage Gate-
Source
Breakdown Voltage Gate-
Drain
Minimum
400
200
-1.5
-30
-30
Maximum
800
600
-0.5
-13
-13
Unit
mA
mS
V
V
V
TABLE III
AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
G
m
(
I
:
Transconductance;
FET Parameters
DSS
−
IDS 1
VG1
)
Test Conditions
For all material types, V
DS
is swept between 0.5 V
and VDSP in search of the maximum value of I
ds
.
This maximum I
DS
is recorded as IDS1. For
Intermediate and Power material, IDS1 is measured
at V
GS
= VG1 = -0.5 V. For Low Noise, HFET and
pHEMT material, V
G S
= VG1 = -0.25 V. For
LNBECOLC, use V
G S
= VG1 = -0.10 V.
V
DS
fixed at 2.0 V, V
GS
is swept to bring I
DS
to
0.5 mA/mm.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (V
GD
) measured is V
BDGD
and recorded as
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (V
GS
) measured is V
BDGS
and recorded
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Positive voltage is applied to the gate to saturate the
device. V
DS
is stepped between 0.5 V up to a
maximum of 3.5 V, searching for the maximum
value of I
DS
.
V
P
:
Pinch-Off Voltage; V
GS
for I
DS
= 0.5 mA/mm of
gate width.
V
BVGD
:
Breakdown Voltage, Gate-to-Drain; gate-to-
drain breakdown current (I
BD
) = 1.0 mA/mm
of gate width.
V
BVGS
:
Breakdown Voltage, Gate-to-Source; gate-to-
source breakdown current (I
BS
) = 1.0 mA/mm
of gate width.
I
MAX
:
Maximum I
D S
.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
3
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE IV
RF WAFER CHARACTERIZATION TEST*
(T
A
= 25°C + 5°C)
(Vd = 8V, Id = 1.2A
±5%)
Parameter
Test Condition
Limit
Min Nom Max
20
24
-
18
6
8
Units
Small-signal
Power Gain
Input Return
Loss
Output Return
Loss
F = 6 to 17 GHz
F = 18 GHz
F = 6 to 18 GHz
F = 6 to 18 GHz
F = 6 to 8 GHz
F = 9 to 18 GHz
F = 6 to 18 GHz
dB
dB
dB
Output Power
@ 2dB gain
compression
Power Added
Efficiency
32
32.5
12
34.5
-
-
-
dBm
25
%
Note: RF probe data taken at 1 GHz steps
* This information is based on the per-channel device.
TABLE V
THERMAL INFORMATION*
Parameter
R
θJC
Thermal Resistance
(channel to backside of
carrier)
Test Conditions
Vd = 8 V
I
D
= 2.4 A
Pdiss = 19.2 W
T
CH
(
o
C)
144.56
R
θJC
(°C/W)
3.88
T
M
(HRS)
1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
*
This information is a result of a thermal model analysis based on the entire two-channel
device.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
4
Product Data Sheet
January 10, 2005
TGA9092-SCC
Data Based on the 50th Percentile On-Wafer RF
Probe Test Results, Sample Size = 3370 Devices
Bias Conditions: Vd = 8 V, Id = 1.2 A
36
35
34
Pout @ P2dB (dBm)
33
32
31
30
29
28
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
40
35
30
25
PAE (%)
20
15
10
5
0
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
5
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