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M28F101-120N6

Description
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Categorystorage    storage   
File Size161KB,23 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M28F101-120N6 Overview

1 Mb 128K x 8, Chip Erase FLASH MEMORY

M28F101-120N6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction8 X 20 MM, PLASTIC, TSOP-32
Contacts32
Reach Compliance Code_compli
ECCN codeEAR99
Maximum access time120 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length18.4 mm
memory density1048576 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width8 mm

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