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M29F800AB90M3T

Description
512K X 16 FLASH 5V PROM, 90 ns, PDSO48
Categorystorage    storage   
File Size128KB,21 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M29F800AB90M3T Overview

512K X 16 FLASH 5V PROM, 90 ns, PDSO48

M29F800AB90M3T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.525 INCH, PLASTIC, SO-44
Contacts44
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time90 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G44
JESD-609 codee3
length28.2 mm
memory density8388608 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,15
Number of terminals44
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height2.62 mm
Department size16K,8K,32K,64K
Maximum standby current0.00015 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
switch bitYES
typeNOR TYPE
width13.3 mm
M29F800AT
M29F800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 70ns
PROGRAMMING TIME
– 8µs per Byte/Word typical
19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
1
44
s
s
s
s
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
TSOP48 (N)
12 x 20mm
SO44 (M)
s
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
Figure 1. Logic Diagram
s
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
19
A0-A18
W
E
G
RP
VCC
s
15
DQ0-DQ14
DQ15A–1
M29F800AT
M29F800AB
BYTE
RB
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– M29F800AT Device Code: 00ECh
– M29F800AB Device Code: 0058h
s
s
VSS
AI02198B
January 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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