AMMP-6333
18-GHz to 33-GHz, 0.2-W Driver Amplifier
in SMT Package
Data Sheet
Description
The AMMP-6333 is a broadband 0.2-W driver amplifier
designed for use in transmitters operating in various frequency
bands from 18 GHz to 33 GHz. This small, easy-to-use device
provides over 23 dBm of output power (P-1dB) and more than
20 dB of gain at 25 GHz. It was optimized for linear operation
with an output power at the third order intercept point (OIP3)
of 30 dBm. The AMMP-6333 features a temperature
compensated RF power detection circuit that enables power
detection sensitivity of 0.3 V/W at 25GHz. It is fabricated using
Broadcom’s unique 0.25-m E-mode PHEMT technology, which
eliminates the need for negative gate biasing voltage.
Features
Frequency range: 18 GHz to 33 GHz
Small signal gain: 20 dB
P-1dB: 23 dBm
Return loss (in/out): –10 dB
Applications
Package Diagram
Microwave radio systems
Satellite VSAT, up/down link
LMDS and Pt-Pt mmW long haul
Broadband wireless access (including 802.16 and 802.20
WiMax)
WLL and MMDS loops
1
2
3
Functional Block Diagram
4
1
2
3
Pin
1
2
3
4
5
6
7
8
8
Function
Vg
Vd
DET_O
RF_out
DET_R
Vd
NC
RF_in
7
6
5
8
4
7
6
5
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model (Class A) = 90 V
ESD Human Body Model (Class 1A) = 300 V
Refer to Broadcom
Application Note A004R:
Electrostatic Discharge, Damage and Control.
NOTE
Broadcom
-1-
MSL Rating = Level 2A
AMMP-6333
Data Sheet
Electrical Specifications
Small/large-signal data measured in a fully de-embedded test fixture form T
A
= 25°C.
Pre-assembly into package performance verified 100 percent on-wafer per AMMC-6220 published specifications.
This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be
improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching.
All tested parameters guaranteed with measurement accuracy±2 dB for P1dB of 17.25 and 32 GHz ± 0.5 for Gain of 17 GHz, ±
1 dB for Gain of 25 and 32 GHz.
RF Electrical Characteristics
TA = 25°C, Vd = 5.0V, Id(Q) = 230 mA, Zin = Zo = 50.
Table 1 RF Electrical Characteristics
17 GHz–20 GHz
Parameter
Small Signal Gain, Gain
Output Power at 1-dB Gain
Compression, P1dB
Output Power at 3-dB Gain
Compression, P3dB
Output Third Order
Intercept Point, OIP3
Reverse Isolation, Iso
Input Return Loss, Rlin
Output Return Loss, RLout
Min.
14
18
—
—
—
—
—
Typ.
16
20.5
21.5
30
45
10
10
Max.
—
—
—
—
—
—
—
20 GHz–30 GHz
Min.
19
22
—
—
—
—
—
Typ.
22
24.5
24.5
30
45
10
14
Max.
—
—
—
—
—
—
—
30 GHz–33 GHz
Unit
Min.
18
21
—
—
—
—
—
Typ.
20.5
24
23.5
30
45
8
10
Max
—
—
—
—
—
—
—
dB
dBm
dBm
dBm
dB
dB
dB
Comment
Recommended Operating Range
Ambient operational temperature T
A
= 25°C unless otherwise noted.
Channel-to-backside thermal resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy.
Thermal resistance at backside temperature (Tb) = 25°C calculated from measured data.
Table 2 Recommended Operating Range
Description
Drain Supply Current, Id
Gate Supply Operating Voltage, Vg
Gate Supply Current, Ig
Min.
—
—
—
Typical
230
2
7
Max.
—
—
—
Unit
mA
V
mA
Comments
Vd=5V, Vg set for typical IdQ – quiescent
current
IdQ = 230 mA
Broadcom
-2-
AMMP-6333
Data Sheet
Thermal Properties
Table 3 Thermal Properties
Parameter
Maximum Power Dissipation
Thermal Resistance,
jc
Thermal Resistance,
jc
Under RF Drive
Tbaseplate = 85°C
Vd = 5V, Id = 230 mA, PD = 1.15W, Tbaseplate = 85°C
Vd = 5V, Id = 400 mA, Pout = 24 dBm, PD = 2W, Tbaseplate = 85°C
Test Conditions
Value
PD = 2.5W, Tchannel = 150°C
jc
= 27 °C/W, Tchannel = 116°C
jc
= 27 °C/W, Tchannel = 139°C
Absolute Minimum and Maximum Ratings
Table 4 Minimum and Maximum Ratings
a
Description
Drain to Gate Voltage, Vd-Vg
Positive Supply Voltage, Vd
Gate Supply Voltage, Vg
Power Dissipation, PD
CW Input Power, Pin
Channel Temperature, Tch
Storage Temperature, Tstg
Maximum Assembly Temperature, Tmax
a.
Min.
—
—
—
—
—
—
–65
—
Max.
14
5.5
0 to 2.5
2.5
20
+150
+155
320
Unit
V
V
V
W
dBm
°C
°C
°C
Comments
30 second maximum
Operation in excess of any one of these conditions may result in permanent damage to this device.
Broadcom
-3-
AMMP-6333
Data Sheet
Typical Performance
(TA = 25°C, V
d
=5V, I
dQ
= 230 mA, Z
in
= Z
out
= 50)
(Data obtained from a test fixture with 2.4-mm connectors. Effects of the test fixture—losses and mismatch—have not been
removed from the dat.a)
Figure 1 Gain and Reverse Isolation vs. Frequency
Figure 2 Return Loss vs. Frequency
40
35
30
25
S21[dB]
S12[dB]
0
0
S11[dB]
S22[dB]
-20
-5
Return Loss [dB]
S21[dB]
S12 [dB]
20
15
10
5
0
10
15
20
25
30
Frequency [GHz]
35
40
-40
-10
-60
-15
-80
-20
10
15
20
25
30
Frequency [GHz]
35
40
Figure 3 P
-1dB
and PAE vs. Frequency
Figure 4 Typical IMD3 vs. Frequency (SCL = Single Carrier Level)
30
P-1
PAE
25
P-1 [dBm], PAE [%]
IMD3 Level [dBc]
20
10
0
-10
-20
-30
-40
-50
-60
-70
16
18
20
22
24
26
Frequency [GHz]
28
30
32
34
SCL=20[dBm]
SCL=10dBm]
SCL=5[dBm]
20
15
10
15
17
19
21
23 25 27
Frequency [GHz]
29
31
33
35
Figure 5 Typical Noise Figure vs. Frequency
Figure 6 Output Power, PAE, and Drain Current vs. Input Power at 30 GHz
10
8
30
25
Pout(dBm)
PAE[%]
Id(total)
400
Po[dBm], and, PAE[%]
Noise Figure [dB]
20
15
10
5
0
-25
200
-20
-15
-10
-5
Pin [dBm]
0
5
300
4
2
0
16
18
20
22
24
26
Frequency [GHz]
28
30
32
34
Broadcom
-4-
Ids [mA]
6
AMMP-6333
Data Sheet
Typical Performance (continued)
(TA = 25°C, Z
in
= Z
out
= 50)
(Data obtained from a test fixture with 2.4-mm connectors. Effects of the test fixture—losses and mismatch—have not been
removed from the dat.a)
Figure 7 P
-1dB
vs. Frequency and Vds, (I
dQ
= 230mA)
Figure 8 Small Signal Gain vs. Frequency and I
dQ
, (Vds =5 V)
27
25
23
P-1[dBm
Gain [dB]
21
19
17
15
15
17
19
21
P-1[Vds=3V]
P-1[Vds=4V]
P-1[Vds=5V]
23 25 27
Frequency[GHz]
29
31
33
35
24
22
20
18
16
14
12
10
8
15
17
19
21
Gain[@180mA]
Gain[@230mA]
Gain[@280mA]
23 25 27
Frequency[GHz]
29
31
33
35
Figure 9 Small Signal Gain vs. Frequency and Vds, (I
dQ
= 230 mA)
Figure 10 P-
1dB
vs. Frequency and I
dQ
, (Vds = 5V)
27
25
23
Gain[dB]
P1 [dBm]
Gain[Vds=3V]
Gain[Vds=4V]
Gain[Vds=5V]
15
17
19
21
23 25 27
Frequency[GHz]
29
31
33
35
21
19
17
15
13
27
25
23
21
19
17
15
15
17
19
21
23 25 27
Frequency[GHz]
29
31
33
35
P-1[@180mA]
P-1[@230mA]
P-1[@280mA]
Broadcom
-5-
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