HM5118160BLJ-6 datasheet, PDF - EEWORLD Datasheet

HM5118160BLJ-6: Description1048576-word x 16-bit Dynamic Random Access Memory; Categorystorage storage; File Size1MB，27 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM5118160BLJ-6 Overview

1048576-word x 16-bit Dynamic Random Access Memory

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	SOJ
package instruction	SOJ, SOJ42,.44
Contacts	42
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-J42
JESD-609 code	e0
length	27.06 mm
memory density	16777216 bi
Memory IC Type	FAST PAGE DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	42
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ42,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	3.76 mm
self refresh	YES
Maximum standby current	0.00015 A
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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