71V3558XS100BQGI8 datasheet, PDF

71V3558XS100BQGI8: DescriptionZBT SRAM, 256KX18, 5ns, CMOS, PBGA165; Categorystorage storage; File Size2MB，29 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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71V3558XS100BQGI8 Overview

ZBT SRAM, 256KX18, 5ns, CMOS, PBGA165

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
package instruction	BGA, BGA165,11X15,40
Reach Compliance Code	compliant
Maximum access time	5 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	18
Humidity sensitivity level	3
Number of terminals	165
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.045 A
Minimum standby current	3.14 V
Maximum slew rate	0.255 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
Base Number Matches	1

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