Silicon Controlled Rectifier, 500000mA I(T), 400V V(DRM)
Parameter Name | Attribute value |
Maker | Advanced Semiconductor, Inc. |
package instruction | , |
Reach Compliance Code | unknown |
Nominal circuit commutation break time | 125 µs |
Critical rise rate of minimum off-state voltage | 200 V/us |
Maximum DC gate trigger current | 200 mA |
Maximum DC gate trigger voltage | 3.5 V |
Maximum leakage current | 50 mA |
On-state non-repetitive peak current | 10000 A |
Maximum on-state voltage | 1.9 V |
Maximum on-state current | 500000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -45 °C |
Off-state repetitive peak voltage | 400 V |
surface mount | NO |
Trigger device type | SCR |
Base Number Matches | 1 |