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54LS10 DM54LS10 DM74LS10 Triple 3-Input NAND Gates
June 1989
54LS10 DM54LS10 DM74LS10
Triple 3-Input NAND Gates
General Description
This device contains three independent gates each of which
performs the logic NAND function
Features
Y
Alternate Military Aerospace device (54LS10) is avail-
able Contact a National Semiconductor Sales Office
Distributor for specifications
Connection Diagram
Dual-In-Line Package
TL F 6349 – 1
Order Number 54LS10DMQB 54LS10FMQB 54LS10LMQB
DM54LS10J DM54LS10W DM74LS10M or DM74LS10N
See NS Package Number E20A J14A M14A N14A or W14B
Function Table
Y
e
ABC
Inputs
A
X
X
L
H
B
X
L
X
H
C
L
X
X
H
Output
Y
H
H
H
L
H
e
High Logic Level
L
e
Low Logic Level
X
e
Either Low or High Logic Level
C
1995 National Semiconductor Corporation
TL F 6349
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings
(Note)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
7V
Input Voltage
7V
Operating Free Air Temperature Range
b
55 C to
a
125 C
DM54LS and 54LS
DM74LS
0 C to
a
70 C
Storage Temperature Range
b
65 C to
a
150 C
Note
The ‘‘Absolute Maximum Ratings’’ are those values
beyond which the safety of the device cannot be guaran-
teed The device should not be operated at these limits The
parametric values defined in the ‘‘Electrical Characteristics’’
table are not guaranteed at the absolute maximum ratings
The ‘‘Recommended Operating Conditions’’ table will define
the conditions for actual device operation
Recommended Operating Conditions
Symbol
V
CC
V
IH
V
IL
I
OH
I
OL
T
A
Parameter
Min
Supply Voltage
High Level Input Voltage
Low Level Input Voltage
High Level Output Current
Low Level Output Current
Free Air Operating Temperature
b
55
DM54LS10
Nom
5
Max
55
Min
4 75
2
07
b
0 4
DM74LS10
Nom
5
Max
5 25
Units
V
V
08
b
0 4
45
2
V
mA
mA
C
4
125
0
8
70
Electrical Characteristics
over recommended operating free air temperature range (unless otherwise noted)
Symbol
V
I
V
OH
V
OL
Parameter
Input Clamp Voltage
High Level Output
Voltage
Low Level Output
Voltage
Conditions
V
CC
e
Min I
I
e b
18 mA
V
CC
e
Min I
OH
e
Max
V
IL
e
Max
V
CC
e
Min I
OL
e
Max
V
IH
e
Min
I
OL
e
4 mA V
CC
e
Min
I
I
I
IH
I
IL
I
OS
I
CCH
I
CCL
Input Current
Input Voltage
Max
V
CC
e
Max V
I
e
7V
V
CC
e
Max V
I
e
2 7V
V
CC
e
Max V
I
e
0 4V
V
CC
e
Max
(Note 2)
V
CC
e
Max
V
CC
e
Max
DM54
DM74
b
20
b
20
Min
Typ
(Note 1)
Max
b
1 5
Units
V
V
DM54
DM74
DM54
DM74
DM74
25
27
34
34
0 25
0 35
0 25
04
05
04
01
20
b
0 36
b
100
b
100
V
mA
mA
mA
mA
High Level Input Current
Low Level Input Current
Short Circuit
Output Current
Supply Current with
Outputs High
Supply Current with
Outputs Low
06
18
12
33
mA
mA
Switching Characteristics
at V
CC
e
5V and T
A
e
25 C (See Section 1 for Test Waveforms and Output Load)
R
L
e
2 kX
Symbol
Parameter
Min
t
PLH
t
PHL
Propagation Delay Time
Low to High Level Output
Propagation Delay Time
High to Low Level Output
3
3
C
L
e
15 pF
Max
10
10
C
L
e
50 pF
Min
4
4
Max
15
15
ns
ns
Units
Note 1
All typicals are at V
CC
e
5V T
A
e
25 C
Note 2
Not more than one output should be shorted at a time and the duration should not exceed one second
2
Physical Dimensions
inches (millimeters)
Ceramic Leadless Chip Carrier Package (E)
Order Number 54LS10LMQB
NS Package Number E20A
14-Lead Ceramic Dual-In-Line Package (J)
Order Number 54LS10DMQB or DM54LS10J
NS Package Number J14A
4