K6F2016V4D-FF55 datasheet, PDF

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K6F2016V4D-FF55: DescriptionStandard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48; Categorystorage storage; File Size160KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6F2016V4D-FF55 Overview

Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48

K6F2016V4D-FF55 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA48,6X8,30
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	7 mm
memory density	2097152 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000002 A
Minimum standby current	1.5 V
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	6 mm
Base Number Matches	1

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K6F2016V4D Family

Document Title

CMOS SRAM

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

0.0

1.0

Initial Draft

Finalized

- Change for tWP : 55 to 50ns for 70ns product

- Change for tWHZ : 25 to 20ns for 70ns product

- Change for tDW : 20 to 25ns for 55ns product

Draft Date

January 6, 2000

May 4, 2000

Remark

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

-1-

Revision 1.0

May 2000

K6F2016V4D-FF55 Related Products

	K6F2016V4D-FF55	K6F2016V4D-FF550	K6F2016V4D-FF70	K6F2016V4D-FF700
Description	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA48,6X8,30	TFBGA,	TFBGA, BGA48,6X8,30	TFBGA,
Contacts	48	48	48	48
Reach Compliance Code	unknown	compliant	unknown	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	55 ns	55 ns	70 ns	70 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
length	7 mm	7 mm	7 mm	7 mm
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	48	48	48	48
word count	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	128KX16	128KX16	128KX16	128KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	6 mm	6 mm	6 mm	6 mm
Base Number Matches	1	1	1	1

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