DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | SAMSUNG |
| Parts packaging code | SODIMM |
| package instruction | DIMM, DIMM200,24 |
| Contacts | 200 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| access mode | DUAL BANK PAGE BURST |
| Maximum access time | 0.45 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 333 MHz |
| I/O type | COMMON |
| JESD-30 code | R-XZMA-N200 |
| memory density | 4294967296 bi |
| Memory IC Type | DDR DRAM MODULE |
| memory width | 64 |
| Humidity sensitivity level | 2 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 200 |
| word count | 67108864 words |
| character code | 64000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | |
| organize | 64MX64 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | DIMM |
| Encapsulate equivalent code | DIMM200,24 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 1.8 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| self refresh | YES |
| Maximum standby current | 0.064 A |
| Maximum slew rate | 1.36 mA |
| Maximum supply voltage (Vsup) | 1.9 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal form | NO LEAD |
| Terminal pitch | 0.6 mm |
| Terminal location | ZIG-ZAG |
| Maximum time at peak reflow temperature | 40 |
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