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FM25C160-P

Description
Memory Circuit, 2KX8, CMOS, PDIP8, PLASTIC, DIP-8
Categorystorage    storage   
File Size99KB,14 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
Download Datasheet Parametric Compare View All

FM25C160-P Overview

Memory Circuit, 2KX8, CMOS, PDIP8, PLASTIC, DIP-8

FM25C160-P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionDIP, DIP8,.3
Contacts8
Reach Compliance Codeunknown
JESD-30 codeR-PDIP-T8
JESD-609 codee0
memory density16384 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count2048 words
character code2000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)240
power supply5 V
Certification statusNot Qualified
Maximum standby current0.00001 A
Maximum slew rate0.0045 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
FM25C160
16Kb FRAM Serial Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High endurance 10 Billion (10
10
) read/writes
10 year data retention at 85° C
NoDelay™ Writes
Advanced high-reliability ferroelectric process
Very Fast Serial Peripheral Interface - SPI
Up to 5 MHz maximum bus frequency
Direct hardware replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware protection
Software protection
Low Power Consumption
10
µA
standby current
Industry Standard Configuration
Industrial temperature -40° C to +85° C
8-pin SOP or DIP
Description
The FM25C160 is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 10 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
Unlike serial EEPROMs, the FM25C160 performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array mere
hundreds of nanoseconds after it has been
successfully transferred to the device. The next bus
cycle may commence immediately. In addition, the
product offers substantial write endurance compared
with other nonvolatile memories. The FM25C160 is
capable of supporting up to 1E10-read/write cycles --
far more than most systems will require from a serial
memory.
These capabilities make the FM25C160 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25C160 provides substantial benefits to users
of serial EEPROM, in a hardware drop-in
replacement. The FM25C160 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. It is guaranteed over an
industrial temperature range of -40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
Pin Names
/CS
SO
/WP
VSS
SI
SCK
/HOLD
VDD
Function
Chip Select
Serial Data Output
Write Protect
Ground
Serial Data Input
Serial Clock
Hold
5V
Ordering Information
FM25C160-P
FM25C160-S
8-pin plastic DIP
8-pin SOP
This data sheet contains design specifications for product development.
These specifications may change in any manner without notice
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058
www.ramtron.com
23 October 2000
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FM25C160-P Related Products

FM25C160-P FM25C160-S
Description Memory Circuit, 2KX8, CMOS, PDIP8, PLASTIC, DIP-8 Memory Circuit, 2KX8, CMOS, PDSO8, MS-012AA, SOIC-8
Is it Rohs certified? incompatible incompatible
Parts packaging code DIP SOIC
package instruction DIP, DIP8,.3 SOP, SOP8,.25
Contacts 8 8
Reach Compliance Code unknown unknown
JESD-30 code R-PDIP-T8 R-PDSO-G8
JESD-609 code e0 e0
memory density 16384 bit 16384 bit
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT
memory width 8 8
Number of functions 1 1
Number of terminals 8 8
word count 2048 words 2048 words
character code 2000 2000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 2KX8 2KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOP
Encapsulate equivalent code DIP8,.3 SOP8,.25
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
power supply 5 V 5 V
Certification status Not Qualified Not Qualified
Maximum standby current 0.00001 A 0.00001 A
Maximum slew rate 0.0045 mA 0.0045 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal pitch 2.54 mm 1.27 mm
Terminal location DUAL DUAL
Base Number Matches 1 1

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