IGBT
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD04N60RA
600VTRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
Datasheet
IndustrialPowerControl
IKD04N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
Features:
TRENCHSTOP
TM
ReverseConducting(RC)technologyfor600V
applicationsoffering
•OptimisedV
CEsat
andV
F
forlowconductionlosses
•SmoothswitchingperformanceleadingtolowEMIlevels
•Verytightparameterdistribution
•Operatingrangeof1to20kHz
•Maximumjunctiontemperature175°C
•Shortcircuitcapabilityof5µs
•Bestinclasscurrentversuspackagesizeperformance
•QualifiedaccordingtoAECQ101
•Pb-freeleadplating;RoHScompliant(forPG-TO252:solder
temperature260°C,MSL1)
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•HIDlighting
•Piezoinjection
G
E
C
G
E
C
KeyPerformanceandPackageParameters
Type
IKD04N60RA
V
CE
600V
I
C
4A
V
CEsat
,T
vj
=25°C
1.65V
T
vjmax
175°C
Marking
K04R60A
Package
PG-TO252-3
2
Rev.2.1,2013-02-15
IKD04N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.1,2013-02-15
IKD04N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
Maximumratings
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
TurnoffsafeoperatingareaV
CE
≤600V,T
vj
≤175°C
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
Short circuit withstand time
V
GE
=15.0V,V
CC
≤400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
=150°C
PowerdissipationT
C
=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Symbol Conditions
Max.Value
Unit
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
600
8.0
4.0
12.0
12.0
8.0
4.0
12.0
±20
Unit
V
A
A
A
A
A
V
t
SC
5
P
tot
T
vj
T
stg
75.0
-40...+175
-55...+175
260
µs
W
°C
°C
°C
R
th(j-c)
R
th(j-c)
R
th(j-a)
R
th(j-a)
2.00
4.50
75
50
K/W
K/W
K/W
K/W
4
Rev.2.1,2013-02-15
IKD04N60RA
TRENCHSTOP
TM
RC-Seriesforhardswitchingapplications
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=4.0A
T
vj
=25°C
T
vj
=175°C
V
GE
=0V,I
F
=4.0A
T
vj
=25°C
T
vj
=175°C
I
C
=0.07mA,V
CE
=V
GE
V
CE
=600V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=4.0A
600
-
-
-
-
4.3
-
-
-
-
-
1.65
1.85
1.70
1.70
5.0
-
-
-
2.2
none
-
2.10
-
2.10
-
5.7
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
F
V
GE(th)
I
CES
I
GES
g
fs
r
G
V
V
40.0 µA
1000.0
100
-
nA
S
Ω
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
ies
C
oes
C
res
Q
G
V
CC
=480V,I
C
=4.0A,
V
GE
=15V
V
GE
=15.0V,V
CC
≤400V,
t
SC
≤5µs
T
vj
=25°C
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
31
305
18
9
27.0
-
-
-
-
-
nC
A
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
Short circuit collector current
Max. 1000 short circuits
I
C(SC)
Time between short circuits:
≥
1.0s
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Symbol Conditions
Value
min.
-
-
-
-
-
-
-
typ.
14
8
146
171
0.09
0.15
0.24
max.
-
-
-
-
-
-
-
Unit
T
vj
=25°C,
V
CC
=400V,I
C
=4.0A,
V
GE
=0.0/15.0V,
r
G
=43.0Ω,Lσ=60nH,
Cσ=40pF
Lσ,CσfromFig.E
ns
ns
ns
ns
mJ
mJ
mJ
5
Rev.2.1,2013-02-15
Power technology
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