5.5A, 800V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-247 |
| package instruction | FLANGE MOUNT, R-PSFM-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 800 V |
| Maximum drain current (ID) | 5.5 A |
| Maximum drain-source on-resistance | 2.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 66 pF |
| JESD-30 code | R-PSFM-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 180 W |
| Maximum pulsed drain current (IDM) | 22 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 79 ns |
| Maximum opening time (tons) | 42 ns |
| Base Number Matches | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD