Octal Buffers & Line Drivers, Inverted Three-State Outputs
Datasheet
November 2010
www.aeroflex.com/logic
PINOUTS
FEATURES
Three-state outputs drive bus lines or buffer memory address
registers
1.2μ
CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 20-pin DIP
- 20-lead flatpack
UT54ACS540 - SMD 5962-96592
UT54ACTS540 - SMD 5962-96593
DESCRIPTION
The UT54ACS540 and the UT54ACTS540 are inverting octal
buffers and line drivers which improve the performance and
density of three-state memory address drivers, clock drivers, and
bus-oriented receivers and transmitters.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
1G
L
L
H
X
2G
L
L
X
H
An
L
H
X
X
OUTPUT
Yn
H
L
Z
Z
1G
A1
A2
A3
A4
A5
A6
A7
A8
V
SS
20-Pin DIP
Top View
1G
A1
A2
A3
A4
A5
A6
A7
A8
V
SS
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
DD
2G
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
20-Lead Flatpack
Top View
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
DD
2G
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
LOGIC SYMBOL
1G
2G
(1)
(19)
&
EN
A1 (2)
(3)
A2
A3 (4)
(5)
A4
A5 (6)
A6 (7)
A7 (8)
A8 (9)
(18)
Y1
(17) Y2
(16) Y3
(15) Y4
(14)
(13)
(12)
(11)
Y5
Y6
Y7
Y8
1
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
LOGIC DIAGRAM
A8
(9)
A7
(8)
A6
(7)
A5
(6)
A4
(5)
A3
(4)
A2
(3)
A1
2G 1G
(1)
(2) (19)
(11)
Y8
(12)
Y7
(13)
Y6
(14)
Y5
(15)
Y4
(16)
Y3
(17)
Y2
(18)
Y1
2
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table
.2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
3
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Three-state output leakage current
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 12.0mA
I
OL
= 100μA
I
OH
= -12.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
2.1
10
1.6
mW/
MHz
μA
mA
-12
mA
.7V
DD
V
DD
- 0.25
-30
-300
12
30
300
.5V
DD
.7V
DD
-1
1
0.40
0.25
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
V
V
OH
V
μA
mA
mA
I
OZ
I
OS
I
OL
4
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
[Competition Details] 2020-2021 ON Semiconductor and Avnet IoT Creative Design CompetitionAs some netizens gave up participating in the competition, the expert committee of the competition selected a ...
EEWORLD社区onsemi and Avnet IoT Innovation Design Competition
I am developing a DLP projector recently, using dlpc4422+dlp650ne+tricolor led
Does DLPC4422 need to use a flash burner to burn the flash? It is not possible to burn it online for the first time?
Is t...
The ZX01 Bluetooth ECG recording module developed by our studio uses nrf52832 as the main control chip. Some problems encountered during the development process will be shared with you one by one:
Let...
Today we comprehensively tested TCP , MQTT , and HTTP connections. TCP can establish up to 7 connections. We still use Anxin Transparent Cloud to test, MQTT connects to Alibaba Cloud, and HTTP connect...
This article records a case with the following functions: connecting to Wi-Fi, network timing, starting the timer (1s), outputting the time once a minute (whole minute) through the serial port, and ou...
Common models and specifications of LED film screens
LED film screens have begun to be used in commercial glass curtain walls, smart windows, indoor spaces and other fields. Compared with trad...[Details]
This year, due to factors such as supply chain production cuts caused by the global epidemic and uncertainties in the overall environment, the domestic automobile industry, regardless of size, is gen...[Details]
According to foreign media reports, Hyundai Motor has set up two ultra-high-speed electric vehicle charging devices "Hi-Charger" in the Goyang motor studio. This device has a DC fast charging capacit...[Details]
Introduction: This paper designs a multimedia car audio system based on a 32-bit ARM microprocessor with RADIO, IRDA, MP3, DVD and other functions. In combination with the complex environment of the ...[Details]
Artificial intelligence? Autonomous driving? Just hearing these words makes the chip industry feel overwhelmed. Given the dual high requirements for computing power, how to launch an in-vehicle AI ch...[Details]
On December 17, the 220 kV Ningmo 2M49 and 2M50 smart cable lines, which were piloted by Jiangsu Nanjing Power Supply Company, successfully passed the acceptance of State Grid Corporation of China,...[Details]
For the noise of switching power supply , besides the chip itself, the layout design is the most important. Here are some related tips. Many concepts about EMI are universal. Let's talk about som...[Details]
1. Method error
It refers to the error caused by imperfect measurement methods, loose theoretical basis, and inappropriate modification and simplification of some classic measurement methods. In o...[Details]
Today, the company introduced the SunPower™ C7 Tracker, a solar photovoltaic tracking system that concentrates seven times more solar energy, delivering the highest levelized cost of electricity (L...[Details]
introduction
In modern times, mobile communication technology has developed rapidly and has become increasingly popular. Wi-fi technology is an important part of modern wireless communication ...[Details]
How long has it been since you played on a seesaw? Even if you see it in the park, you're itching to try it! You may have missed the previous ones, but don't miss this one again, it's a seesaw that i...[Details]
introduction
This project is a technical transformation project for a cable factory. The equipment to be transformed is a cable-twisting machine made using the principle of cable bundles. The ...[Details]
Samsung Electronics released its fourth-quarter earnings report on Thursday. The report showed that although Samsung achieved record revenue for the fourth consecutive quarter, its profit fell short ...[Details]
With the rapid development of science and technology, the development of traditional television, newspapers and magazines has lagged behind the development of outdoor media. Here we will introduce yo...[Details]
On October 23, Bloomberg reported today that Arm plans to cancel the license that allows its long-term partner Qualcomm to use Arm intellectual property to design chips.
Documents obtained by ...[Details]
onsemi and Avnet IoT Innovation Design Competition
京公网安备 11010802033920号
EEWORLD
