SMART
Features
•
•
•
•
•
•
•
•
•
•
•
®
SM5321640U4XUUU
April 24, 1998
Modular Technologies
64MByte (16M x 32) DRAM Module - 16Mx4 based
72-pin SIMM
Part Numbers
SM532164004XUUU
SM532164014XUUU
SM532164084XUUU
SM532164094XUUU
:
:
:
:
Standard
:
JEDEC (5.0V FPM only)
Configuration
:
Non-parity
Access Time
:
50/60/70ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
4K
Device Physicals
:
400mil SOJ/TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 1.250"
No. of sides
:
Single-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5321610UUX3UU
:
16Mx32,
16Mx1 based.
Functional Diagram
CAS1#
CAS0#
RAS0#
16Mx8
Block
16Mx8
Block
16Mx8
Block
16Mx8
Block
CAS2#
CAS3#
RAS2#
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ0~DQ31
Notes : 1.
2.
3.
4.
A0~A11 to all DRAMs
WE# to all DRAMs.
OE# of all devices is grounded.
Each 16Mx8 Block comprises of two 16Mx4 DRAMs.
( All specifications of this device are subject to change without notice.)
V
CC
V
SS
Decoupling capacitors
to all devices.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A11
DQ0~DQ31
RAS0#, RAS2#
CAS0#~CAS3#
WE#
PD1~PD4
V
CC
V
SS
NC
®
SM5321640U4XUUU
April 24, 1998
Modular Technologies
Pin
No.
Row and Column Addresses
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
A11
V
CC
A8
A9
NC
RAS2#
NC
NC
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
NC
NC
V
SS
CAS0#
CAS2#
CAS3#
CAS1#
RAS0#
NC
NC
WE#
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
V
CC
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Access Time
50ns
60ns
70ns
V
SS
TBD
V
SS
TBD
NC
NC
TBD
NC
V
SS
TBD
NC
NC
Pin
PD1
PD2
PD3
PD4
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5321640U4XUUU
April 24, 1998
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Vcc=3.3V
- 0.5 to +4.6
8
0 to +70
- 55 to +150
50
Ratings
Vcc=5.0V
- 1.0 to +7.0
8
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%/5.0V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#)
Input Capacitance (CAS#)
Input Capacitance (WE#)
Input/Output Capacitance (DQ0~DQ31)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I4
C
I/O
Max
50
38
24
66
17
Unit
pF
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Vcc=3.3V
Typ
Max
3.3
3.6
0
-
-
0
V
CC
+0.3
0.8
Vcc=5.0V
Min
Typ
Max
4.5
5.0
5.5
0
2.4
-1.0
0
-
-
0
V
CC
+1.0
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5321640U4XUUU
April 24, 1998
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
50ns
60ns
Min Max Min Max
-80
80 -80
80
-10
10
-10
10
70ns
Min Max
-80 80
-10
10
Unit
µ
A
µ
A
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -5mA
Low I
out
= 4.2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
50ns
60ns
70ns
Min Max Min Max Min Max
-80
80 -80
80
-80 80
-10
10
-10
10
-10
10
Unit
µ
A
µ
A
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
FPM-based Modules
®
SM5321640U4XUUU
April 24, 1998
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
50ns
1200
Max.
60ns
1120
Unit
70ns
1040
mA
Note
1, 2
16
16
16
mA
Standby Current
I
CC2
8
1200
1200
640
8
1120
1120
560
8
1040
1040
520
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
50ns
1200
Max.
60ns
1120
Unit
70ns
1040
mA
Note
1, 2
16
16
16
mA
Standby Current
I
CC2
8
1200
1200
640
8
1120
1120
560
8
1040
1040
520
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
京公网安备 11010802033920号
EEWORLD
