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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
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1PS70SB16
17 December 2012
Dual Schottky barrier diode
Product data sheet
1. General description
Dual Planar Schottky barrier diode in common anode configuration with an integrated
guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-
Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
Low forward voltage
Low capacitance
AEC-Q101 qualified
3. Applications
•
•
•
•
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1.
Symbol
Per diode
I
F
V
R
Per diode
V
F
forward voltage
I
F
= 10 mA; T
amb
= 25 °C
-
-
400
mV
forward current
reverse voltage
-
-
-
-
200
30
mA
V
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
1PS70SB16
Dual Schottky barrier diode
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
K1
K2
A1, A2
cathode (diode 1)
cathode (diode 2)
common anode
1
2
Simplified outline
3
Graphic symbol
A1, A2
K1
K2
aaa-004974
SC-70 (SOT323)
6. Ordering information
Table 3.
Ordering information
Package
Name
1PS70SB16
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
1PS70SB16
[1]
7%6
% = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
1PS70SB16
Parameter
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
Conditions
Min
-
-
Max
30
200
300
600
200
150
150
Unit
V
mA
mA
mA
mW
°C
°C
t
p
≤ 1 s; δ ≤ 0.5
t
p
< 10 ms; T
j(init)
= 25 °C
T
amb
< 25 °C
-
-
-
-
-55
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
2/9
NXP Semiconductors
1PS70SB16
Dual Schottky barrier diode
Symbol
T
stg
Parameter
storage temperature
Conditions
Min
-65
Max
150
Unit
°C
9. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
[1]
Thermal characteristics
Parameter
Conditions
in free air
[1]
Min
-
Typ
-
Max
625
Unit
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
10. Characteristics
Table 7.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA; T
amb
= 25 °C
I
F
= 1 mA; T
amb
= 25 °C
I
F
= 10 mA; T
amb
= 25 °C
I
F
= 30 mA; T
amb
= 25 °C
I
F
= 100 mA; T
amb
= 25 °C
I
R
C
d
reverse current
diode capacitance
V
R
= 25 V; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C
-
-
10
pF
-
-
-
-
-
-
-
-
-
-
-
-
240
320
400
500
800
2
mV
mV
mV
mV
mV
µA
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
1PS70SB16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
3/9
NXP Semiconductors
1PS70SB16
Dual Schottky barrier diode
10
3
I
F
(mA)
10
2
(1)
006aac829
(3)
(2)
10
3
I
R
(µA)
10
2
(2)
(1)
aaa-004515
10
10
(1)
(2)
(3)
1
1
(3)
10
-1
0.0
0.4
0.8
V
F
(V)
1.2
10
-1
0
10
20
V
R
(V)
30
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 1.
Forward current as a function of forward
voltage; typical values
10
C
d
(pF)
8
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
006aac891
6
4
2
0
0
10
20
V
R
(V)
30
T
amb
= 25 °C; f = 1 MHz
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
1PS70SB16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
17 December 2012
4/9
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