RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CROSS PACK-4
| Parameter Name | Attribute value |
| Maker | Panasonic |
| package instruction | DISK BUTTON, O-XRDB-F4 |
| Contacts | 4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 13 V |
| Maximum drain current (Abs) (ID) | 0.05 A |
| Maximum drain current (ID) | 0.05 A |
| FET technology | METAL SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 0.04 pF |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | O-XRDB-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DUAL GATE, DEPLETION MODE |
| Maximum operating temperature | 135 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 0.35 W |
| Minimum power gain (Gp) | 13 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
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