This version:
Feb. 23. 1999
Semiconductor
MSC2313258D-xxBS2/DS2
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC2313258D-xxBS2/DS2 is a fully decoded, 1,048,576-word x 32-bit CMOS dynamic random access
memory module composed of two 16Mb DRAMs in SOJ packages mounted with four decoupling capacitors on a
72-pin glass epoxy single-inline package. This module supports any application where high density and large
capacity of storage memory are required.
FEATURES
· 1,048,576-word x 32-bit organization
· 72-pin socket insertable module
MSC2313258D-xxBS2 : Gold tab
MSC2313258D-xxDS2 : Solder tab
· Single +5V supply ± 10% tolerance
· Input
: TTL compatible
· Output
: TTL compatible, 3-state
· Refresh : 1024cycles/16ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode capability
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
MSC2313258D-60BS2/DS2
MSC2313258D-70BS2/DS2
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
Cycle
Time
(Min.)
Operating(Max.)
Standby(Max.)
Power Dissipation
104ns
124ns
1375mW
11mW
1265mW
Semiconductor
MSC2313258D
MODULE OUTLINE
MSC2313258D-xxBS2/DS2
107.95±0.2
*1
101.19Typ.
(Unit : mm)
5.28Max.
3.38Typ.
3.18
19.0±0.2
Typ. Typ.
10.16 6.35
2.03Typ.
6.35Typ.
6.0Min.
1
1.27±0.1
R1.57
6.35
95.25
1.04Typ.
72
+0.1
1.27 -0.08
*1 The common size difference of the board width 12.5mm of its height is specified as ±0.2.
The value above 12.5mm is specified as ±0.5.
Semiconductor
MSC2313258D
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
( Ta = 25°C )
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
T
OPR
T
STG
Rating
-1.0 to +7.0
-1.0 to +7.0
50
2
0 to +70
-40 to +125
Unit
V
V
mA
W
°C
°C
Recommended Operating Conditions
( Ta = 0°C to +70°C )
Parameter
Power Supply Voltage
V
SS
Input High Voltage
Input Low Voltage
V
IH
V
IL
0
2.4
-1.0
0
-
-
0
6.5
0.8
V
V
V
Symbol
V
CC
Min.
4.5
Typ.
5.0
Max.
5.5
Unit
V
Capacitance
( V
CC
= 5V ± 10%, Ta = 25°C, f = 1 MHz )
Parameter
Input Capacitance (A0 - A9)
Input Capacitance (/WE)
Input Capacitance (/RAS0, /RAS2)
Input Capacitance (/CAS0- /CAS3)
I/O Capacitance (DQ0 - DQ31)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Typ.
-
-
-
-
-
Max.
21
20
13
13
18
Unit
pF
pF
pF
pF
pF
Note:
Capacitance measured with Boonton Meter.