MC-4R128FKE6D-653 datasheet, PDF

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MC-4R128FKE6D-653: DescriptionDirect Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT); Categorystorage storage; File Size114KB，14 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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MC-4R128FKE6D-653 Overview

Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)

MC-4R128FKE6D-653 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DMA
package instruction	DIMM, DIMM184,40
Contacts	184
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	BLOCK ORIENTED PROTOCOL
Maximum access time	53 ns
Other features	SELF CONTAINED REFRESH
Maximum clock frequency (fCLK)	600 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	1073741824 bi
Memory IC Type	RAMBUS DRAM MODULE
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
organize	64MX16
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184,40
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.63 V
Minimum supply voltage (Vsup)	2.37 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	MOS
Terminal form	NO LEAD
Terminal pitch	1 mm
Terminal location	DUAL

MC-4R128FKE6D-653 Related Products

	MC-4R128FKE6D-653	MC-4R128FKE6D-845	MC-4R128FKE6D-745	MC-4R128FKE6D
Description	Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)	Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)	Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)	Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Is it Rohs certified?	incompatible	incompatible	incompatible	-
Maker	ELPIDA	ELPIDA	ELPIDA	-
Parts packaging code	DMA	DMA	DMA	-
package instruction	DIMM, DIMM184,40	DIMM, DIMM184,40	DIMM, DIMM184,40	-
Contacts	184	184	184	-
Reach Compliance Code	unknow	unknow	unknow	-
ECCN code	EAR99	EAR99	EAR99	-
access mode	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	-
Maximum access time	53 ns	45 ns	45 ns	-
Other features	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	-
Maximum clock frequency (fCLK)	600 MHz	800 MHz	711 MHz	-
I/O type	COMMON	COMMON	COMMON	-
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	-
memory density	1073741824 bi	1073741824 bi	1073741824 bi	-
Memory IC Type	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	-
memory width	16	16	16	-
Number of functions	1	1	1	-
Number of ports	1	1	1	-
Number of terminals	184	184	184	-
word count	67108864 words	67108864 words	67108864 words	-
character code	64000000	64000000	64000000	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
organize	64MX16	64MX16	64MX16	-
Output characteristics	3-STATE	3-STATE	3-STATE	-
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-
encapsulated code	DIMM	DIMM	DIMM	-
Encapsulate equivalent code	DIMM184,40	DIMM184,40	DIMM184,40	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-
power supply	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
self refresh	YES	YES	YES	-
Maximum supply voltage (Vsup)	2.63 V	2.63 V	2.63 V	-
Minimum supply voltage (Vsup)	2.37 V	2.37 V	2.37 V	-
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	-
surface mount	NO	NO	NO	-
technology	MOS	MOS	MOS	-
Terminal form	NO LEAD	NO LEAD	NO LEAD	-
Terminal pitch	1 mm	1 mm	1 mm	-
Terminal location	DUAL	DUAL	DUAL	-

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