DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3326
PACKAGE
Isolated TO-220
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•
Low gate charge :
Q
G
= 22 nC TYP. (V
DD
= 400 V, V
GS
= 10 V, I
D
= 10 A)
•
Gate voltage rating :
±30
V
•
Low on-state resistance :
R
DS(on)
= 0.85
Ω
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
•
Avalanche capability ratings
•
Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
500
±30
±10
±40
40
2.0
150
–55 to +150
10
10.7
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Starting T
ch
= 25 °C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14204EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
2000
2SK3326
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain Leakage Current
Gate to Source Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V, di/dt = 50 A /
µ
s
V
DD
= 400 V, V
GS
= 10 V, I
D
= 10 A
V
DD
= 150 V, I
D
= 5.0 A, V
GS(on)
= 10 V,
R
G
= 10
Ω,
R
L
= 60
Ω
TEST CONDITIONS
V
DS
= 500 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
2.5
2.0
4.0
0.68
1200
190
10
21
11
40
9.5
22
6.5
7.5
1.0
0.5
2.6
0.85
MIN.
TYP.
MAX.
100
±100
3.5
UNIT
µ
A
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µ
s
µ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
I
D
90 %
90 %
I
D
V
GS
Wave Form
0
10 %
V
GS(on)
90 %
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1 %
I
D
Wave Form
0
10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14204EJ1V0DS00
2SK3326
TYPICAL CHARACTERISTICS(T
A
= 25 °C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
dT - Percentage of Rated Power - %
50
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
80
40
60
40
30
20
20
10
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
T
c
- Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
d
ite V)
Lim10
)
on
=
S(
S
R
D
t V
G
a
(
T
c
- Case Temperature - ˚C
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
Pulsed
I
D (pulse)
P
10
W
=
I
D
- Drain Current - A
10
10
I
D (DC)
0
Po
we
10
1m
s
m
s
µ
s
I
D
- Drain Current - A
µ
s
V
GS
= 20 V
10 V
8.0 V
10
1
rD
10
iss
0
m
ip
s
n
Li
m
at
io
V
GS
= 6.0 V
0.1
1
T
c
= 25 ˚C
Single Pulse
10
ite
d
100
1000
V
DS
- Drain to Source Voltage - V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
Pulsed
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
0.01
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
0.001
0.0001
0
5
10
15
V
GS
- Gate to Source Voltage - V
Data Sheet D14204EJ1V0DS00
3
2SK3326
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th (t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 62.5 ˚C/W
10
R
th(ch-C)
= 3.2 ˚C/W
1
0.1
T
c
= 25 ˚C
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
2.0
Iy
fs
I - Forward Transfer Admittance - S
10
1
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
0.1
R
DS(on)
- Drain to Source On-state Resistance -
Ω
1.0
I
D
= 10 A
5.0 A
2.0 A
0.01
0.01
V
DS
= 10 V
Pulsed
0.1
1
I
D
- Drain Current - A
10
100
0.0
Pulsed
0
5
10
15
20
25
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
Ω
Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
GS(off)
- Gate to Source Cut-off Voltage - V
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= 10 V
I
D
= 1 mA
3.0
3.0
Pulsed
2.0
2.0
1.0
1.0
0
0.1
0.0
–50
0
50
100
150
200
1
10
100
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14204EJ1V0DS00
2SK3326
R
DS(on)
- Drain to Source On-state Resistance -
Ω
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
I
SD
- Diode Forward Current - A
Pulsed
10
2.0
I
D
= 10 A
1
V
GS
= 10 V
V
GS
= 0 V
1.0
I
D
= 5.0 A
0.1
0.0
–50
V
GS
= 10 V
0
50
100
150
T
ch
- Channel Temperature - ˚C
0.01
0.0
0.5
1.0
1.5
V
SD
- Source to Drain Voltage - V
Figure14. SWITCHING CHARACTERISTICS
1000
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
GS
= 0 V
f = 1.0 MHz
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
r
t
f
C
iss
1000
C
oss
100
100
t
d(on)
t
d(off)
10
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
0.1
1
10
I
D
- Drain Current - A
100
10
C
rss
1
1
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
900
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
di/dt = 50 A/µs
V
GS
= 0 V
700
600
500
400
300
200
100
0
5
V
DS
V
DD
= 400 V
250 V
100 V
14
12
V
GS
10
8
6
4
2
15
20
0
25
800
700
600
500
400
300
200
100
0
0.1
1
10
100
I
F
- Drain Current - A
10
Q
G
- Gate Charge - nC
Data Sheet D14204EJ1V0DS00
V
GS
- Gate to Source Voltage - V
I
D
= 10 A
5
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