Provisional Data Sheet No.PD-6.0027A
IRSF3010
FULLY PROTECTED POWER MOSFET SWITCH
General Description:
The IRSF3010 is a three terminal monolithic
SMART POWER MOSFET with built in short cir-
cuit, over-temperature, ESD and over-voltage pro-
tections.
The on chip protection circuit latches off the
POWER MOSFET in case the drain current ex-
ceeds 14A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage
is actively clamped at 55V (typical), prior to the
avalanche of POWER MOSFET, thus improving
its performance during turn off with inductive
loads.
The input current requirements are very low
(300uA) which makes the IRSF3010 compatible with
most existing designs based on standard
POWER MOSFETs.
Rating Summary:
V
ds(clamp)
R
ds(on)
I
ds(sd)
T
j(sd)
E
AS
50 V
80 m
Ω
11 A
155
°C
400 mJ
Features:
n
Extremely Rugged for Harsh Operating
Environments
n
Over Temperature Protection
n
Over Current Protection
n
Active Drain to Source Clamp
n
ESD Protection
n
Compatible with standard POWER
MOSFET
n
Low Operating Input Current
n
Monolithic Construction
n
Dual set/reset Threshold Input
Applications:
n
DC Motor Drive
n
Solenoid Driver
Drain
Tab
Pin Assignment
Pin 1 - Input
Pin 2 - Drain
Pin 3 - Source
Tab - Drain
1
2
3
IRSF3010
IRSF3010S
IRSF3010 - Block Diagram
Source
Available Packages
IRSF3010
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc =
25°C unless otherwise specified.)
Symbol
Vds, max
Vin, max
Ids
Pd
EAS
Vesd1
Vesd2
T
Jop
T
Stg
T
L
Parameter Definition
Continuous Drain to Source Voltage
Continuous Input Voltage
Continuous Drain Current
Power Dissipation
Linear Derating Factor for Tc > 25
°
C
Unclamped Single Pulse Inductive Energy
Electrostatic Discharge Voltage (Human Body Model)
(Machine Model)
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
—
-0.3
—
—
—
—
—
—
-55
-55
—
Max.
50
10
self limited
Units Test Conditions
V
40
0.33
400
4000
1000
self-limited
175
300
W
W/°C
mJ
V
Tc
≤
25°C
1000pF. 1.5kΩ
200pF, 0Ω
o
C
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
Symbol
Vds,clamp
Rds(on)
Parameter Definition
Drain to Source Clamp Voltage
Drain to Source On Resistance
Min. Typ. Max. Units
50
—
—
—
—
54
56
70
85
53
—
—
10
2.0
0.25
0.35
0.5
0.6
10.8
1.2
—
62
80
—
—
10
100
250
2.5
0.6
0.85
1.0
1.2
—
1.5
V
mA
V
µA
mΩ
V
Test Conditions
Ids = 10mA
Ids = 11A, tp = 700
µ
S
Vin = 5V, Ids = 4A
Vin = 4V, Ids = 4A
Vin = 10V, I ds = 4A
Vds = 12V, Vin = 0V
Vds = 50V, Vin = 0V
Vds =40V,Vin=0V,Tc =150
o
C
Idss
Drain to Source Leakage Current
—
—
—
Vth
I i, on
Ii, off
Input Threshold Voltage
Input Supply Current (Normal Operation)
Input Supply Current (Protection Mode)
1.5
—
—
—
—
10
—
Vds = 5V, Ids = 1mA
Vin = 5V
Vin = 10V
Vin = 5V
Vin = 10V
Iin = 10mA
Ids = -17A, Rin = 1k
Ω
Vin, clamp Input Clamp Voltage
Vsd
Body-Drain Diode Forward Drop
Thermal Characteristics
Symbol
R
Θjc
R
ΘjA
Parameter Definition
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Min. Typ. Max. Units
—
—
3.0
60
—
—
°C/W
°C/W
Test Conditions
2
IRSF3010
Switching Electrical Characteristics:
(Vcc = 14V, Resistive Load RL = 5Ω, Tc = 25 °C.) Please refer to Figure 15 for switching time definitions.
Symbol
tdon
tr
tdoff
tf
Parameter Definition
Turn-On Delay time
Rise Time
Turn-Off Delay time
Fall Time
Min.
—
—
—
—
—
—
—
—
Typ. Max. Units
425
150
2000
425
650
850
500
450
650
—
4000
—
1000
—
800
—
nS
Test Conditions
Vin = 5V
Vin = 10V
Vin = 5V
Vin = 10V
Vin = 5V
Vin = 10V
Vin = 5V
Vin = 10V
Protection Characteristics:
(Tc = 25 °C unless otherwise specified.)
Symbol
Ids(sd)
Tj(sd)
Vprotect
tIresp
tIblank
Ipeak
Vreset
treset
tTresp
Parameter Definition
Over-Current Shutdown Threshold
Over Temperature Shutdown Threshold
Minimum Input Voltage for Over-temp fxn.
Over Current Response Time
Over Current Blanking Time
Peak Short Circuit Current
Protection Reset Voltage
Protection Reset Time
OverTemperature Response Time
Min. Typ. Max. Units
11
155
—
—
—
—
—
—
—
14
165
3
2
3
20
1.3
7
12
17
—
—
—
—
—
—
—
—
A
°C
V
Test Conditions
Vin = 5V
Vin = 5V, Ids = 2A
See figure 16 for definition
See figure 16 for definition
See figure 16 for definition
See figure 17 for definition
See figure 18 for definition
µS
A
V
µ
S
Temperature Coefficients of Electrical Characteristics:
(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.
Symbol
Parameter Definition
Clamp Voltage
Min.
—
—
—
—
Typ. Max. Units
18.2
-3.2
7.0
-21.5
—
—
—
—
mV/
o
C
Test Conditions
Ids = 10mA
Vds = 5V, Ids = 1mA
Iin = 10mA
Vds,clamp Temperature Coefficient of Drain to Source
Temperature Coefficient of Input Threshold
Voltage
Vin,clamp Temperature Coefficient of Input Clamp
Voltage
Ids(sd)
Temperature Coefficient of Over-Current
Shutdown Threshold
Vth
mA/
o
C Vin = 5V
Notes:
1. EAS is tested with a constant current source of 11A applied for 700µS with Vin = OV and starting Tj = 25
o
C.
2. Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode
is forward biased.
3
IRSF3010
120
110
T = 25°C
120
110
Ids = 4A
Rds(on) (mOhm)
100
90
80
Vin = 5V
70
Vin = 7V
60
50
40
2
4
6
8
10
12
14
16
18
Vin = 10V
Vin = 4V
Rds(on) (mOhm)
100
90
Vin = 5V
80
70
60
50
40
30
-50
-25
0
25
50
Vin = 10V
75
100
125
150
Ids (A)
Temperature (°C)
Fig. 3 - On Resistance vs Drain to Source Current
17
16
Fig. 4 - On Resistance vs. Temperature
15
T = 25°C
Shut Down Current (A)
Shut Down Current (A)
16
Vin = 5V
14
15
13
12
14
11
13
4
5
6
7
8
9
10
10
-50
-25
0
25
50
75
100
125
150
Input Voltage (Volts)
Temperature (°C)
Fig. 5 - Over-current Shutdown Threshold vs
Input Voltage
1.6
1.4
1.2
T=25°C
Fig. 6 - Over-current Shutdown Threshold vs
Temperature
3500
Vdd = 25V
3000
2500
Ids = 8A
2000
1500
1000
500
0
0
25
50
75
100
125
150
Ids = 12A
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
10
11
Iin,on
Iin,off
Single Pulse Energy to Failure (mJ)
Input Current (mA)
Rating
Input Voltage (Volts)
Starting Junction Temperature (°C)
Figure 7 - Input Current vs. Input Voltage
Fig. 8 - Unclamped Single Pulse Inductive Energy to
Failure vs Starting Junction Temperature
4
IRSF3010
2.50
T = 25°C
Rise T ime, On Delay (µS )
2.00
R ise T ime, On Delay (µS)
2.00
Rise Time
1.50
Vin = 5V
1.00
On Delay
0.50
2.50
1.50
Rise Time
1.00
On Delay
0.50
0.00
3
4
5
6
7
8
9
10
11
Input Voltage (Volts)
0.00
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
F ig. 9 - Tu rn on characteristics vs Input Voltag e
F ig. 10 - Turn on characteristics vs Temperature
0.9
T = 25°C
Fall T ime, Off Delay (µS )
Off Delay
0.7
0.6
0.5
0.4
0.3
3
4
5
6
7
8
9
10
11
Input Voltage (Volts)
Fall Time
F all T ime, Off Delay (µS)
0.8
0.9
0.8
0.7
0.6
Vin = 5V
0.5
Fall Time
0.4
0.3
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Off Delay
Fig. 11 - T urn off characteristics vs Input Voltage
Fig. 12 - Turn off characteristics vs Temperature
100
T hermal R esponse (°C/W)
Reverse Drain Current (A)
10
Duty Factor =
0.5
T = 150°C
1
0.1
10
0.1
0
T = 25°C
DF=
0.50
0.20
0.10
0.05
0.02
0.01
0.00
1
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Source to Drain Voltage (Volts)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse Duration tp (S)
Fig. 13 - Source-Drain Diode Forward Voltage
Fig. 14 - Tran sien t Thermal Impedan ce, Junction to Case
5
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