VISHAY
BAW56
Vishay Semiconductors
Small Signal Switching Diode, Dual
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common anode
• This diode is also available in other configurations
including: a single with type designation BAL99, a
dual anode to cathode with type designation
BAV99, and a dual common cathode with type
designation BAV70.
2
1
1
2
3
3
17033
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAW56
Ordering code
BAW56-GS18 or BAW56-GS08
JD
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
Forward current ( continous)
Non repetitive peak forward
current
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
Power dissipation
1)
Test condition
Symbol
V
R
, V
RM
Value
70
Unit
V
I
F
I
FSM
I
FSM
I
FSM
P
diss
250
2.0
1.0
0.5
350
1)
mA
A
A
A
mW
Device on fiberglass substrate, see layout
Document Number 85549
Rev. 1.6, 09-Jul-04
www.vishay.com
1
BAW56
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
1)
VISHAY
Test condition
Symbol
R
thJA
T
J
T
S
Value
430
150
- 65 to + 150
Unit
°C/W
°C
°C
Device on fiberglass substrate, see layout
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Reverse current
V
R
= 70 V
V
R
= 70 V, T
j
= 150 °C
V
R
= 25 V, T
j
= 150 °C
Diode capacitance
Reverse recovery time
V
F
= V
R
= 0, f = 1 MHz
I
F
= 10 mA to I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
Ω
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
tot
t
rr
Min
Typ.
Max
0.715
0.855
1.0
1.25
2.5
100
30
2
6
Unit
V
V
V
V
µA
µA
µA
pF
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
1000
I
F
- Forward Current ( mA )
100
T
j
= 100
°
C
10
1
0.1
125
°
C
0.01
14356
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
- Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
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2
Document Number 85549
Rev. 1.6, 09-Jul-04
BAW56
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85549
Rev. 1.6, 09-Jul-04
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