IRGS15B60KDTRRPBF datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> The transistor> IRGS15B60KDTRRPBF

IRGS15B60KDTRRPBF: DescriptionInsulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size824KB，16 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

IRGS15B60KDTRRPBF Overview

Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

IRGS15B60KDTRRPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
Other features	ULTRA FAST
Shell connection	COLLECTOR
Maximum collector current (IC)	31 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	231 ns
Nominal on time (ton)	52 ns
Base Number Matches	1

Preview

Download Datasheet

View All

PD - 95194A

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (on) Non Punch Through IGBT

Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• Lead-Free

IRGB15B60KDPbF

IRGS15B60KDPbF

IRGSL15B60KDPbF

CES

= 600V

= 15A, T

=100°C

> 10µs, T

=150°C

n-channel

CE(on)

typ. = 1.8V

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

TO-220AB

Pak

IRGS15B60KDPbF

Absolute Maximum Ratings

Parameter

CES

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

IRGB15B60KDPbF

TO-262

IRGSL15B60KDPbF

Max.

600

± 20

208

-55 to +150

300 (0.063 in. (1.6mm) from case)

Units

°C

Thermal Resistance

Parameter

θJC

θCS

θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, steady state)

Weight

Min.

–––

Typ.

–––

0.50

–––

1.44

Max.

0.6

2.1

–––

Units

°C/W

www.irf.com

10/03/05

IRGS15B60KDTRRPBF Related Products

	IRGS15B60KDTRRPBF	IRGB15B60KD	IRGS15B60KD	IRGS15B60KDTRL	IRGS15B60KDTRLPBF
Description	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	D2PAK	TO-220AB	D2PAK	D2PAK	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Other features	ULTRA FAST	ULTRA FAST	ULTRA FAST	ULTRA FAST	ULTRA FAST
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	31 A	31 A	31 A	31 A	31 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V	600 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e0	e0	e0	e3
Number of components	1	1	1	1	1
Number of terminals	2	3	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	225	225	225	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	YES	YES
Terminal surface	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30	30	30
transistor applications	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal off time (toff)	231 ns	231 ns	231 ns	231 ns	231 ns
Nominal on time (ton)	52 ns	52 ns	52 ns	52 ns	52 ns
Base Number Matches	1	1	1	1	1
Humidity sensitivity level	1	-	1	1	1
Maximum landing time (tf)	-	36 ns	36 ns	36 ns	-
Gate emitter threshold voltage maximum	-	5.5 V	5.5 V	5.5 V	-
Gate-emitter maximum voltage	-	20 V	20 V	20 V	-
Maximum power dissipation(Abs)	-	208 W	208 W	208 W	-
Maximum rise time (tr)	-	25 ns	25 ns	25 ns	-

Recommended Resources

Single-phase active energy meter wiring with current transformer

Chandelier brightness controller circuit three

Control geography capable of issuing start and stop signals

D flip-flop circuit

555 rock lantern controller circuit

Computer motherboard circuit diagram 440BX_28

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components