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MA45257-31

Description
L BAND, 5.6pF, 45V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size340KB,5 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
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MA45257-31 Overview

L BAND, 5.6pF, 45V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

MA45257-31 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE
Minimum breakdown voltage45 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio5.4
Nominal diode capacitance5.6 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandL BAND
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Maximum power dissipation0.2 W
Certification statusNot Qualified
minimum quality factor2000
Maximum reverse current0.02 µA
Reverse test voltage36 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
Base Number Matches1
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