IRLR2908TR datasheet, PDF - EEWORLD Datasheet

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IRLR2908TR: DescriptionPower Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size334KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRLR2908TR Overview

Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRLR2908TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	250 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	120 W
Maximum pulsed drain current (IDM)	150 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 95552B

Features

HEXFET

Power MOSFET

IRLR2908PbF

IRLU2908PbF

DSS

= 80V

DS(on)

= 28mΩ

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

= 30A

Description

This HEXFET ® Power MOSFET utilizes the latest processing techniques

to achieve extremely low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction operating temperature,

low RθJC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared,

or wave soldering techniques. The straight lead version (IRFU series) is

for through-hole mounting applications. Power dissipation levels up to 1.5

watts are possible in typical surface mount applications.

I-Pak

D-Pak

IRLU2908PbF

IRLR2908PbF

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

(tested)

dv/dt

STG

Continuous Drain Current, V

@ 10V (Silicon Limited)

Continuous Drain Current, V

@ 10V (See Fig. 9)

Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

Max.

150

120

0.77

± 16

180

250

See Fig.12a,12b,15,16

2.3

-55 to + 175

300 (1.6mm from case )

Units

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

W/°C

V/ns

°C

Peak Diode Recovery dv/dt

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Avalanche Current

Thermal Resistance

θJC

θJA

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

Typ.

Max.

1.3

110

Units

°C/W

jÃ

–––

www.irf.com

10/01/10

IRLR2908TR Related Products

	IRLR2908TR	IRLR2908	IRLR2908TRL	IRLR2908TRRPBF	IRLR2908TRR
Description	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	AUTOMOTIVE MOSFET	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2	PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3	3
Reach Compliance Code	compliant	unknow	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	80 V	80 V	80 V	80 V
Maximum drain current (Abs) (ID)	30 A	30 A	30 A	30 A	30 A
Maximum drain current (ID)	30 A	30 A	30 A	30 A	30 A
Maximum drain-source on-resistance	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0	e0	e3	e0
Humidity sensitivity level	1	1	1	1	1
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245	245	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	120 W	120 W	120 W	120 W	120 W
Maximum pulsed drain current (IDM)	150 A	150 A	150 A	150 A	150 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	NOT SPECIFIED	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	-	1	1	1
Is it lead-free?	-	-	Contains lead	Lead free	Contains lead

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