CAT28F512G12 datasheet, PDF - EEWORLD Datasheet

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CAT28F512G12: DescriptionFlash Memory 64 X 8 512K 120ns; Categorystorage storage; File Size90KB，16 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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CAT28F512G12 Overview

Flash Memory 64 X 8 512K 120ns

CAT28F512G12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
Parts packaging code	QFJ
package instruction	QCCJ, LDCC32,.5X.6
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	120 ns
command user interface	YES
Data polling	NO
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e3
length	13.97 mm
memory density	524288 bit
Memory IC Type	FLASH
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum standby current	0.00001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	40
switch bit	NO
type	NOR TYPE
width	11.43 mm

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CAT28F512

512K-Bit CMOS Flash Memory

FEATURES

Fast Read Access Time: 90/120/150 ns

Low Power CMOS Dissipation:

Licensed Intel

second source

Commercial, Industrial and Automotive

Temperature Ranges

Stop Timer for Program/Erase

On-Chip Address and Data Latches

JEDEC Standard Pinouts:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100

A max (CMOS levels)

High Speed Programming:

–10

s per byte

–1 Sec Typ Chip Program

12.0V

5% Programming and Erase Voltage

–32-pin DIP

–32-pin PLCC

–32-pin TSOP ( 8 x 20)

100,000 Program/Erase Cycles

10 Year Data Retention

"Green" Package Options Available

Electronic Signature

DESCRIPTION

The CAT28F512 is a high speed 64K x 8-bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after-sale

code updates. Electrical erasure of the full memory

contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard

EPROM and EEPROM devices. Programming and Erase

are performed through an operation and verify algo-

rithm. The instructions are input via the I/O bus, using a

two write cycle scheme. Address and Data are latched

to free the I/O bus and address bus during the write

operation.

The CAT28F512 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, 32-pin PLCC or 32-pin

TSOP packages.

BLOCK DIAGRAM

I/O0–I/O7

I/O BUFFERS

ERASE VOLTAGE

SWITCH

COMMAND

PROGRAM VOLTAGE

SWITCH

CE, OE LOGIC

DATA

LATCH

SENSE

AMP

ADDRESS LATCH

Y-GATING

Y-DECODER

524,288 BIT

MEMORY

ARRAY

A0–A15

X-DECODER

VOLTAGE VERIFY

SWITCH

Characteristics subject to change without notice

Doc. No. MD-1084, Rev. K

CAT28F512G12 Related Products

	CAT28F512G12	CAT28F512N-90	CAT28F512GI90	CAT28F512GI12	CAT28F512G90
Description	Flash Memory 64 X 8 512K 120ns	Flash Memory 64 X 8 512K	Flash Memory 64 X 8 512K 90ns	Flash Memory 64 X 8 512K 120ns	Flash Memory 64 X 8 512K 90ns
Is it Rohs certified?	conform to	incompatible	conform to	conform to	conform to
Parts packaging code	QFJ	QFJ	QFJ	QFJ	QFJ
package instruction	QCCJ, LDCC32,.5X.6	PLASTIC, LCC-32	QCCJ, LDCC32,.5X.6	QCCJ, LDCC32,.5X.6	QCCJ, LDCC32,.5X.6
Contacts	32	32	32	32	32
Reach Compliance Code	compliant	not_compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	120 ns	90 ns	90 ns	120 ns	90 ns
command user interface	YES	YES	YES	YES	YES
Data polling	NO	NO	NO	NO	NO
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32
JESD-609 code	e3	e0	e3	e3	e3
length	13.97 mm	13.97 mm	13.97 mm	13.97 mm	13.97 mm
memory density	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8	8
Number of functions	1	1	1	1	1
Number of terminals	32	32	32	32	32
word count	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C	70 °C
organize	64KX8	64KX8	64KX8	64KX8	64KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	240	260	260	245
power supply	5 V	5 V	5 V	5 V	5 V
Programming voltage	12 V	12 V	12 V	12 V	12 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.55 mm	3.55 mm	3.55 mm	3.55 mm	3.55 mm
Maximum standby current	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A
Maximum slew rate	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	MATTE TIN	TIN LEAD	Tin (Sn)	Tin (Sn)	MATTE TIN
Terminal form	J BEND	J BEND	J BEND	J BEND	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	40	30	40	40	40
switch bit	NO	NO	NO	NO	NO
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	11.43 mm	11.43 mm	11.43 mm	11.43 mm	11.43 mm
Maker	ON Semiconductor	-	ON Semiconductor	ON Semiconductor	ON Semiconductor
Humidity sensitivity level	3	-	3	3	3
Base Number Matches	-	1	1	1	1

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