IPA65R190C7 datasheet, PDF - EEWORLD Datasheet

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IPA65R190C7: DescriptionPower Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size2MB，15 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPA65R190C7 Overview

Power Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN

IPA65R190C7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1505604989
package instruction	GREEN, PLASTIC, TO-220FP, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Samacsys Manufacturer	Infineon
Samacsys Modified On	2020-11-30 19:47:12
YTEOL	6.5
Avalanche Energy Efficiency Rating (Eas)	57 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	650 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	49 A
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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