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IRF7321D2TRPBF

Description
Headers u0026 Wire Housings 4 POS HEADER
CategoryDiscrete semiconductor    The transistor   
File Size207KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF7321D2TRPBF Overview

Headers u0026 Wire Housings 4 POS HEADER

IRF7321D2TRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)4.7 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
surface mountYES
Base Number Matches1
PD - 95297
IRF7321D2PbF
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l
Ideal For Buck Regulator Applications
l
P-Channel HEXFET®
l
Low V
F
Schottky Rectifier
l
Generation 5 Technology
l
SO-8 Footprint
l
Lead-Free
Description
l
FETKY
MOSFET & Schottky Diode
A
A
S
G
1
2
3
4
8
7
6
5
TM
K
K
D
D
V
DSS
= -30V
R
DS(on)
= 0.062Ω
Schottky Vf = 0.52V
Top View
The
FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
SO-8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Á
Junction and Storage Temperature Range
Maximum
Units
A
-4.7
-3.8
-38
2.0
1.3
16
± 20
-5.0
-55 to +150
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient
Ã
Maximum
62.5
Units
°C/W
Notes:

Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚
I
SD
-2.9A, di/dt
-77A/µs, V
DD
V
(BR)DSS
, T
J
150°C
ƒ
Pulse width
300µs – duty cycle
2%
„
Surface mounted on FR-4 board, t
10sec.
www.irf.com
10/12/04
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