DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D102
BAP63-05W
Silicon PIN diode
Product specification
Supersedes data of 2001 Apr 04
2001 May 18
NXP Semiconductors
Product specification
Silicon PIN diode
FEATURES
High speed switching for RF signals
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz.
APPLICATIONS
RF attenuators and switches.
handbook, halfpage
BAP63-05W
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
3
3
DESCRIPTION
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
1
2
1
Top view
2
MAM382
Marking code:
W9-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
90
C
65
65
50
100
240
+150
+150
V
mA
mW
C
C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 May 18
2
NXP Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
Per diode
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 50 mA
V
R
= 35 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
s
21
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
s
21
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
PARAMETER
CONDITIONS
BAP63-05W
TYP.
MAX.
UNIT
0.95
0.4
0.35
0.3
2.5
1.95
1.17
0.9
14.5
9.5
7.0
0.23
0.27
0.33
0.19
0.24
0.30
0.14
0.19
0.25
0.11
0.17
0.23
310
1.1
10
0.35
3.5
3
1.8
1.5
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
L
S
Note
series inductance
1.5
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 May 18
3
NXP Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP63-05W
handbook, halfpage
10
MGW126
handbook, halfpage
500
MGW133
rD
(Ω)
Cd
(fF)
400
300
1
200
100
10
−1
10
−1
1
10
I F (mA)
10
2
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
C.
20
f = 100 MHz; T
j
= 25
C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
MGW134
handbook, halfpage
2
0
MGW135
|
s 21
|
handbook, halfpage
2
0
(dB)
−0.1
|
s 21
|
(1)
(dB)
−10
(3)
(2)
−0.2
(4)
−20
−0.3
−0.4
−30
−0.5
0
1
2
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
f (GHz)
3
−40
0
1
2
f (GHz)
3
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
C.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
Fig.4
Insertion loss (s
21
2
) of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (s
21
2
) of the diode in off-state as a
function of frequency; typical values.
2001 May 18
4
NXP Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BAP63-05W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2001 May 18
5
京公网安备 11010802033920号
EEWORLD
