MCM69Q618TQ10R datasheet, PDF - EEWORLD Datasheet

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MCM69Q618TQ10R: Description64K x 18 Bit Synchronous Separate I/O SRAM; Categorystorage storage; File Size121KB，12 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCM69Q618TQ10R Overview

64K x 18 Bit Synchronous Separate I/O SRAM

MCM69Q618TQ10R Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	10 ns
Other features	SELF TIMED WRITE
JESD-30 code	R-PQFP-G100
length	20 mm
memory density	1179648 bi
Memory IC Type	STANDARD SRAM
memory width	18
Number of functions	1
Number of ports	1
Number of terminals	100
word count	65536 words
character code	64000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX18
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	MOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by MCM69Q618/D

Advance Information

MCM69Q618

64K x 18 Bit Synchronous

Separate I/O Fast SRAM

The Motorola MCM69Q618 is a 1 Megabit static random access memory, organized

as 64K words of 18 bits. It features separate data input and data output buffers and

incorporates input and output registers on board with high speed SRAM.

The MCM69Q618 allows the user to perform transparent write and data pass

through. Two data bus ports are provided – a data input (D) and a data output (Q) port.

The synchronous design allows for precise cycle control with the use of an external

single clock (K). Address port, data input (D0 – D17), data output (Q0 – Q17), write en-

able (W), chip enables (E1, E2), and pass–through enable (PT) are registered on the

rising edge of clock (K).

Any given cycle operates on only one address. However, for any cycle, reads and

writes can be intermixed. Thus, one can perform a read, a write, or a combination read/

write during any one cycle. For a combination read/write, the contents of the array are

read before the new data is written.

By using the pass–through function, the output port Q can be made to reflect either

the contents of the array or the data presented to the input port D. For read/write or a

read cycle with G low, the Q port will output the contents of the array. However, if PT

is asserted, the Q port will instead output the data presented at the D input port.

•

Single 3.3 V

5% Power Supply

Fast Access Times: 6/8/10 ns Max

Sustained Throughput of 1.49 Gigabits/Second

Single Clock Operation

Address, Data Input, E1, E2, PT, W, and Data Output Registers on Chip

83 MHz Maximum Clock Cycle Time

Self Timed Write

Separate Data Input and Data Output Pins

Pass–Through Feature

Asynchronous Output Enable (G)

LVTTL Compatible I/O

No Dead Cycles Required for Reads after Writes or for Writes after Reads

100 Pin TQFP Package

Simultaneous Reads and Writes

— Routers

— Shared Memory

TQ PACKAGE

100 PIN TQFP

CASE 983A–01

Suggested Applications

— ATM

— Ethernet Switches

— Cell/Frame Buffers — SNA Switches

Product Family Configurations

Part

Number

Dual

Address

MCM69D536

MCM69D618

MCM69Q536

MCM69Q618

MCM67Q709

MCM67Q909

Single

Address

Dual

I/O

Note 1

Separate

I/O

Note 2

NOTES:

1. Tie AX and AY address ports together for the part to function as a single address part.

2. Tie GX high for DQX to be inputs and tie WY high and GY low for DQY to be outputs.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 5

11/24/97

Motorola, Inc. 1997

MOTOROLA FAST SRAM

MCM69Q618

MCM69Q618TQ10R Related Products

	MCM69Q618TQ10R	MCM69Q618TQ8R	MCM69Q618TQ6R	MCM69Q618TQ8	MCM69Q618TQ6	MCM69Q618	MCM69Q618TQ10
Description	64K x 18 Bit Synchronous Separate I/O SRAM	64K x 18 Bit Synchronous Separate I/O SRAM	64K x 18 Bit Synchronous Separate I/O SRAM	64K x 18 Bit Synchronous Separate I/O SRAM	64K x 18 Bit Synchronous Separate I/O SRAM	64K x 18 Bit Synchronous Separate I/O SRAM	64K x 18 Bit Synchronous Separate I/O SRAM
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	-	Motorola ( NXP )
Parts packaging code	QFP	QFP	QFP	-	QFP	-	QFP
package instruction	LQFP,	LQFP,	LQFP,	TQFP-100	LQFP, QFP100,.63X.87	-	LQFP, QFP100,.63X.87
Contacts	100	100	100	-	100	-	100
Reach Compliance Code	unknow	unknow	unknown	unknown	unknown	-	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A
Maximum access time	10 ns	8 ns	6 ns	8 ns	6 ns	-	10 ns
Other features	SELF TIMED WRITE	SELF TIMED WRITE	SELF TIMED WRITE	SELF TIMED WRITE	SELF TIMED WRITE	-	SELF TIMED WRITE
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	-	R-PQFP-G100
length	20 mm	20 mm	20 mm	20 mm	20 mm	-	20 mm
memory density	1179648 bi	1179648 bi	1179648 bit	1179648 bit	1179648 bit	-	1179648 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM
memory width	18	18	18	18	18	-	18
Number of functions	1	1	1	1	1	-	1
Number of ports	1	1	1	1	1	-	1
Number of terminals	100	100	100	100	100	-	100
word count	65536 words	65536 words	65536 words	65536 words	65536 words	-	65536 words
character code	64000	64000	64000	64000	64000	-	64000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	-	70 °C
organize	64KX18	64KX18	64KX18	64KX18	64KX18	-	64KX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE
Exportable	YES	YES	YES	YES	YES	-	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP	LQFP	LQFP	-	LQFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	-	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	-	1.6 mm
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	-	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	-	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V
surface mount	YES	YES	YES	YES	YES	-	YES
technology	MOS	MOS	MOS	MOS	MOS	-	MOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	-	0.65 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	-	QUAD
width	14 mm	14 mm	14 mm	14 mm	14 mm	-	14 mm

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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