DUAL PHOTOTRANSISTOR
OPTOCOUPLERS
MCT6
DESCRIPTION
The MCT6X Optocouplers have two channels for density applications. For four
channel applications, two-packages fit into a standard 16-pin DIP socket. Each
channel is an NPN silicon planar phototransistor optically coupled to a gallium
arsenide infrared emitting diode.
8
1
MCT61
MCT62
FEATURES
•
•
•
•
Two isolated channels per package
Two packages fit into a 16 lead DIP socket
Choice of three current transfer ratios
Underwriters Laboratory (U.L.) recognized File E90700
8
1
8
1
APPLICATIONS
AC Line/Digital Logic - isolate high voltage transients
Digital Logic/Digital Logic - Eliminate spurious grounds
Digital Logic/AC Triac Control - isolate high voltage transients
Twisted pair line receiver - Eliminate ground loop feedthrough
Telephone/Telegraph line receiver - isolate high voltage transients
High Frequency Power Supply Feedback Control - Maintain floating grounds and
transients
• Relay contact monitor - isolate floating grounds and transients
• Power supply monitor - Isolate transients
•
•
•
•
•
•
SCHEMATIC
ANODE 1
8 EMITTER
CATHODE 2
7 COLLECTOR
CATHODE 3
6 COLLECTOR
ANODE 4
5 EMITTER
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
Rating
EMITTER
(Each channel)
Forward Current - Continuous
Forward Current - Peak (PW = 1µs, 300pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C (Total Input)
DETECTOR
(Each channel)
Collector Current - Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature (wave solder)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
T
STG
T
OPR
T
SOL
P
D
-55 to +150
-55 to +100
250 for 10 sec
400
5.33
°C
°C
°C
mW
mW/°C
I
C
P
D
30
150
2.0
mA
mW
mW/°C
I
F
I
F
(pk)
V
R
P
D
60
3
3.0
100
1.3
mA
A
V
mW
mW/°C
Symbol
Value
Unit
© 2003 Fairchild Semiconductor Corporation
Page 1 of 8
10/20/04
DUAL PHOTOTRANSISTOR
OPTOCOUPLERS
MCT6
MCT61
MCT62
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
(I
C
= 1.0 mA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CE
= 0 V, f = 1 MHz)
BV
CEO
BV
ECO
I
CEO
C
CE
30
6
85
13
5
8
100
V
V
nA
pF
(I
F
= 20 mA)
(I
R
= 10 µA)
(V
R
= 5 V)
(V
F
= 0 V, f = 1 MHz)
V
F
V
R
I
R
C
J
3.0
1.2
25
0.001
50
10
1.5
V
V
µA
pF
Test Conditions
Symbol
Min
Typ**
Max
Unit
TRANSFER CHARACTERISTICS
AC Characteristic
SWITCHING TIMES
Non-Saturated Turn-on Time
Non-Saturated Turn-off Time
(R
L
= 100
Ω
, I
C
= 2 mA, V
CC
= 10 V)
(R
L
= 100
Ω
, I
C
= 2 mA, V
CC
= 10 V)
t
on
t
off
2.4
2.4
µs
µs
Test Conditions
Symbol
Min
Typ**
Max
Units
TRANSFER CHARACTERISTICS
DC Characteristic
Current Transfer Ratio, Collector-Emitter
MCT6
MCT61
MCT62
Saturation Voltage
(I
F
= 10 mA, V
CE
= 10 V)
(I
F
= 5 mA, V
CE
= 5 V)
(I
F
= 16 mA, I
C
= 2 mA)
V
CE(sat)
CTR
20
50
100
0.15
0.40
V
%
Test Conditions
Symbol
Min
Typ**
Max
Units
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
Test Conditions
(I
I-O
≤
1 µA, t = 1 min.)
(V
I-O
= 500 VDC)
(f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Min
5300
10
11
0.5
Typ**
Max
Units
Vac(rms)
Ω
pf
© 2003 Fairchild Semiconductor Corporation
Page 2 of 8
10/20/04
DUAL PHOTOTRANSISTOR
OPTOCOUPLERS
MCT6
Normalized CTR vs. Forward Current
MCT61
MCT62
Normalized CTR vs. Ambient Temperature
1.4
V
CE
= 5.0V
T
A
= 25˚C
Normalized to
I
F
= 10 mA
1.6
1.2
1.4
I
F
= 5 mA
NORMALIZED CTR
NORMALIZED CTR
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
I
F
- FORWARD CURRENT (mA)
20
1.2
I
F
= 10 mA
1.0
0.8
0.6
Normalized to
I
F
= 10 mA
T
A
= 25˚C
I
F
= 20 mA
0.4
-75
-50
-25
0
25
50
75
100
T
A
- AMBIENT TEMPERATURE (˚C)
125
Dark Current vs. Ambient Temperature
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (µA)
10
1
V
CE
= 10 V
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (˚C)
© 2003 Fairchild Semiconductor Corporation
Page 3 of 8
10/20/04
DUAL PHOTOTRANSISTOR
OPTOCOUPLERS
MCT6
MCT61
MCT62
Switching Speed vs. Load Resistor
1000
I
F
= 10 mA
V
CC
= 10 V
T
A
= 25˚C
LED Forward Voltage vs. Forward Current
1.8
1.7
V
F
- FORWARD VOLTATGE (V)
SWITCHING SPEED - (µs)
100
1.6
1.5
1.4
T
A
= 55˚C
T
off
10
T
f
T
on
1.3
T
A
= 25˚C
1
T
r
1.2
1.1
0.1
0.1
1
10
R-LOAD RESISTOR (kΩ)
100
1.0
1
T
A
= 100˚C
10
I
F
- LED FORWARD CURRENT (mA)
100
Collector-Emitter Saturation Voltage vs Collector Current
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
100
T
A
= 25˚C
10
1
I
F
= 2.5 mA
0.1
0.01
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
© 2003 Fairchild Semiconductor Corporation
Page 4 of 8
10/20/04
DUAL PHOTOTRANSISTOR
OPTOCOUPLERS
MCT6
MCT61
MCT62
Package Dimensions (Through Hole)
PIN 1
ID.
4
3
2
1
Package Dimensions (Surface Mount)
0.390 (9.91)
0.370 (9.40)
4
3
2
1
PIN 1
ID.
0.270 (6.86)
0.250 (6.35)
5
6
7
8
0.270 (6.86)
0.250 (6.35)
0.390 (9.91)
0.370 (9.40)
5
6
7
8
SEATING PLANE
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.140 (3.55)
0.020 (0.51) MIN
0.070 (1.78)
0.045 (1.14)
0.020 (0.51)
MIN
0.300 (7.62)
TYP
0.016 (0.41)
0.008 (0.20)
0.154 (3.90)
0.120 (3.05)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.016 (0.40)
0.008 (0.20)
15° MAX
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
0.045 [1.14]
0.315 (8.00)
MIN
0.405 (10.30)
MIN
Package Dimensions (0.4"Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
4
3
2
1
PIN 1
ID.
0.070 (1.78)
0.270 (6.86)
0.250 (6.35)
0.060 (1.52)
5
6
7
8
0.390 (9.91)
0.370 (9.40)
0.100 (2.54)
0.295 (7.49)
0.070 (1.78)
0.045 (1.14)
SEATING PLANE
0.415 (10.54)
0.030 (0.76)
0.200 (5.08)
0.140 (3.55)
0.004 (0.10) MIN
0.154 (3.90)
0.120 (3.05)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.016 (0.40)
0.008 (0.20)
0° to 15°
0.400 (10.16)
TYP
NOTE
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
Page 5 of 8
10/20/04
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