MG100Q1JS40 datasheet, PDF - EEWORLD Datasheet

MG100Q1JS40: DescriptionN CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS); CategoryDiscrete semiconductor The transistor; File Size243KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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MG100Q1JS40 Overview

N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code	unknow
Other features	HIGH SPEED
Shell connection	ISOLATED
Maximum collector current (IC)	100 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)	500 ns
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X5
Number of components	1
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	670 W
Maximum power dissipation(Abs)	670 W
Certification status	Not Qualified
Maximum rise time (tr)	600 ns
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
VCEsat-Max	4 V
Base Number Matches	1

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