PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5109
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
The MGFC5109 is a GaAs MMIC chip
especially designed for 27.0 ~ 30.0 GHz band
Low Noise Amplifier.(LNA) .
BLOCK DIAGRAM
FEATURES
RF frequency : 27.0 to 30.0 GHz
Super Low Noise NF=2.5dB (TYP.)
In
Vg1
Vg2
Vg3
Out
PHOTOGRAPH
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Vd
Id
Vg
Pin
Ta
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (Duration < 1sec)
Operating temperature range
Parameter
Values
3
30
Unit
V
mA
V
dBm
˚C
-
TBD
TBD
Limits
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol
Fop
Gain
Delta gain
NF
VSWR in
VSWR out
P1dB
Output IP3
Vd
Id
Vg
Parameter
Operating frequency
range
Small signal gain
Small signal gain flatness
Noise figure
Input VSWR
Output VSWR
Output power at 1 dB
compression
Output power at 3rd-
order intercept point
Drain bias voltage
Drain bias current
Gate bias voltage
Freq=30GHz
Vd=2.5V,Id=20mA
On-wafer
measurement
27.0
17.0
18.0
1.5
2.5
2.5:1
2.0:1
(5)
TBD
(17)
TBD
2.5
30
No need
dBm
dBm
V
mA
V
as of July '98
30.0
Test conditions
Min.
Typ.
Max.
Unit
GHz
dB
dB
dB
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5109
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µm)
1824
1808
1308
808
308
116
Vd1
Vd2
Vd3
GND
GND
RF-in
GND
Vg1
Vg2
Vg3
GND
RF-out
GND
GND
145
645
1145
1645
1940
MITSUBISHI
ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5109
Ka-Band 3-Stage Self Bias Low Noise Amplifier
TYPICAL CHARACTERISTICS
Small Signal Performances
(Vd = 2.5 V, Id = 30 mA, Ta = 25 ˚C )
25
20
15
10
5
0
VSWR in
VSWR out
NF
10
8
6
4
2
0
26
27
28
29
30
Frequency [GHz]
31
32
MITSUBISHI
ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5109
Ka-Band 3-Stage Self Bias Low Noise Amplifier
AN EXAMPLE OF TEST CIRCUIT
Cb
*1
*2
Cb
Cb
:Chip capacitor (39pF)
Cb > 100µF
Vd1
Vd2
Vd3
GND
GND
RF-in
GND
Vg1
Vg2
Vg3
GND
GND
RF-out
GND
*1
*2
*1 Length of bonding wire < 200 µm
*2 Number of bonding wire
≥
3
MITSUBISHI
ELECTRIC
as of July '98
京公网安备 11010802033920号
EEWORLD
