1N5451CCHIP datasheet, PDF - EEWORLD Datasheet

1N5451CCHIP: DescriptionVariable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt; CategoryDiscrete semiconductor diode; File Size60KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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1N5451CCHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt

Parameter Name	Attribute value
package instruction	X-XUUC-N
Reach Compliance Code	compli
ECCN code	EAR99
Other features	GOOD Q
Minimum breakdown voltage	30 V
Configuration	SINGLE
Diode Capacitance Tolerance	2%
Minimum diode capacitance ratio	2.6
Nominal diode capacitance	39 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	X-XUUC-N
Number of components	1
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Certification status	Not Qualified
minimum quality factor	300
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	2e-8 µA
Reverse test voltage	25 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Varactor Diode Classification	ABRUPT
Base Number Matches	1

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