TK35S04K3L
MOSFETs
Silicon N-channel MOS (U-MOS)
TK35S04K3L
1. Applications
•
•
•
•
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
(4)
AEC-Q101 qualified
Low drain-source on-resistance: R
DS(ON)
= 8.2 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 40 V)
Enhancement mode: V
th
= 2.0 to 3.0 V (V
DS
= 10 V, I
D
= 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK+
Start of commercial production
1
2011-04
2014-08-04
Rev.5.0
TK35S04K3L
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(Note 3)
(Note 3)
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
T
ch
T
stg
Rating
40
±20
35
70
58
42
35
175
-55 to 175
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
R
th(ch-c)
Max
2.6
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: V
DD
= 25 V, T
ch
= 25 (initial), L = 36
µH,
R
G
= 1
Ω,
I
AR
= 35 A
Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-08-04
Rev.5.0
TK35S04K3L
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
=
±16
V, V
DS
= 0 V
V
DS
= 40 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 6 V, I
D
= 17.5 A
V
GS
= 10 V, I
D
= 17.5 A
Min
40
20
2.0
Typ.
11.0
8.2
Max
±10
10
3.0
15.0
10.3
mΩ
V
Unit
µA
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
See Figure 6.2.1.
Test Condition
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
1370
180
320
9
19
12
35
Max
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
25
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Q
g
Q
gs
Q
gd
Test Condition
V
DD
≈
32 V, V
GS
= 10 V, I
D
= 35 A
Min
Typ.
28
18
10
Max
Unit
nC
25
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 4)
(Note 4)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 35 A, V
GS
= 0 V
I
DR
= 35 A, V
GS
= 0 V
-dI
DR
/dt = 50 A/µs
Min
Typ.
35
17
Max
35
70
-1.2
V
ns
nC
Unit
A
Note 4: Ensure that the channel temperature does not exceed 175.
3
2014-08-04
Rev.5.0
TK35S04K3L
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
4
2014-08-04
Rev.5.0
TK35S04K3L
8. Characteristics Curves (Note)
Fig. 8.1 I
D
- V
DS
Fig. 8.2 I
D
- V
DS
Fig. 8.3 I
D
- V
GS
Fig. 8.4 V
DS
- V
GS
Fig. 8.5 R
DS(ON)
- I
D
Fig. 8.6 R
DS(ON)
- T
a
5
2014-08-04
Rev.5.0
DIY/Open Source Hardware
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