STPS160H100TV
High voltage power Schottky rectifier
Datasheet - production data
A1
K1
Description
High frequency dual Schottky rectifier designed
for high frequency telecom, computer SMPS and
other power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation and in high
frequency circuitries where low switching losses
and low noise are required.
Table 1: Device summary
Symbol
I
F(AV)
V
RRM
Value
2 x 80 A
100 V
150 °C
0.68 V
A2
K2
A2
K2
A1
K1
ISOTOP
Features
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade-off between leakage current and
forward voltage drop
Avalanche rated
Low induction package
Insulated package ISOTOP:
Insulated voltage: 2500 V
RMS
Capacitance: 45 pF
T
j
(max.)
V
F
(max.)
TM: ISOTOP is a trademark of
STMicroelectronics
November 2017
DocID5384 Rev 5
1/10
www.st.com
This is information on a product in full production.
Characteristics
STPS160H100TV
1
Characteristics
Table 2: Absolute ratings (limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
T
j
Notes:
(1)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
T
C
= 110 °C
Per diode
Per device
Value
100
180
80
160
1000
2
10
5400
-55 to +150
150
Unit
V
A
A
A
A
A
W
°C
°C
t
p
= 10 ms sinusoidal
t
p
= 2 μs square f = 1 kHz
t
p
= 100 μs square
t
p
= 10 μs T
j
= 125 °C
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
R
th(j-c)
R
th(c)
Junction to case
Coupling
Parameter
Per diode
Total
Maximum
values
0.9
0.5
0.14
°C/W
Unit
When the diodes 1 and 2 are used simultaneously:
Δ T
j
(diode1) = P
(diode1)
x R
th(j-c) (per diode)
+ P
(diode2)
x R
th(c)
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DocID5384 Rev 5
STPS160H100TV
Table 4: Static electrical characteristics
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F
(2)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Notes:
(1)
Pulse
(2)
Pulse
Characteristics
Min.
-
-
-
-
-
-
-
-
-
-
0.75
0.69
0.63
0.59
13
Typ.
Max.
40
50
0.75
0.63
0.80
0.68
0.87
0.74
0.92
0.80
V
Unit
µA
mA
V
R
= V
RRM
I
F
= 60 A
I
F
= 80 A
I
F
= 120 A
I
F
= 160 A
test: t
p
= 5 ms, δ < 2%
test: t
p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.56 x I
F(AV)
+ 0.0015 x I
F2(RMS)
DocID5384 Rev 5
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Characteristics
STPS160H100TV
1.1
Characteristics (curves)
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (δ = 0.5, per diode)
100
IF(AV) (A)
Rth(j-a) = Rth(j-c)
80
60
Rth(j-a) = 2 °C/W
40
T
20
δ
=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
Figure 3: Normalized avalanche power derating
versus pulse duration
1
P
ARM
(t p )
P
ARM
(10 µs)
Figure 4: Relative variation of thermal impedance
junction versus pulse duration (per diode)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.1
0.6
δ
= 0.5
0.4
δ = 0.2
δ = 0.1
0.01
0.2
T
Single puls e
tp (s)
δ
=tp/T
1E+0
tp
5E+0
t
p
(µs)
0.001
0.0
1E-3
1E-2
1E-1
1
10
100
1000
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
I R(mA )
Figure 6: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C (nF)
10.0
5E +1
1E +1
T
j
=125°C
F = 1 MH z
T j= 25°C
1E +0
1E -1
1.0
1E -2
T
j
=25°C
1E -3
0
10
20
30
40
50
60
VR(V)
70
80
90
100
0.1
1
2
5
VR(V)
10
20
50
100
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DocID5384 Rev 5
STPS160H100TV
Characteristics
Figure 7: Forward voltage drop versus forward current (maximum values, per diode)
DocID5384 Rev 5
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