HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary Data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
= 25°C,
Note 1
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
IXFE 39N90
D
V
DSS
I
D25
R
DS(on)
t
= 900 V
= 34 A
= 220 mΩ
Ω
< ns
G
S
S
Maximum Ratings
900
900
±20
±30
34
154
39
64
4
5
580
-40 ... +150
150
-40 ... +150
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
°
C
°C
°
C
V~
V~
ISOPLUS 227
TM
(IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
Conforms to SOT-227B outline
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
•
Fast intrinsic Rectifier
Applications
•
DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
900
2.5
5.0
±200
T
J
= 25°C
T
J
= 125°C
100
2
220
V
V
nA
µA
mA
mΩ
•
Battery chargers
•
Switched-mode and resonant-mode
power supplies
•
DC choppers
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
=
I
T
Notes 2, 3
•
Temperature and lighting controls
Advantages
•
Low cost
•
Easy to mount
•
Space savings
•
High power density
© 2002 IXYS All rights reserved
DS98920A(12/02)
IXFE 39N90
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
30
45
13400
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1230
320
45
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
R
G
= 1
Ω
(External),
68
125
30
375
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
75
190
0.22
0.07
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
ISOPLUS-227 B
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 15 V; I
D
= I
T
, Note 2
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
Note 1
I
F
= I
S
, V
GS
= 0 V,
Note 2
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
39
154
1.3
250
2
9
A
A
V
ns
µC
A
I
F
= 25A, -di/dt = 100 A/µs, V
R
= 100 V
Please see IXFN39N90 data sheet
for characteristic curves.
Notes: 1. Pulse width limited by T
JM.
2. Pulse test, t
≤
300 ms, duty cycle d
≤
2%.
3.
I
T
Test current:
I
T
= 19.5 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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