TPCA8010-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8010-H
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
6.0±0.3
Unit: mm
0.5±0.1
1.27
8
0.4±0.1
5
0.05 M A
•
•
•
•
•
•
•
Small footprint due to a small and thin package
High-speed switching
Small gate charge: Q
SW
= 3.7 nC (typ.)
5.0±0.2
0.15±0.05
1
0.95±0.05
4
0.595
A
High forward transfer admittance: |Y
fs
| = 3.9S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 200V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
5.0±0.2
S
1
4
0.6±0.1
4.25±0.2
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
Rating
200
200
±20
5.5
11
45
2.8
Unit
8
V
V
V
A
W
W
5 0.8±0.1
1, 2, 3 : SOURCE
4 : GATE
5, 6, 7, 8 : DRAIN
JEDEC
JEITA
TOSHIBA
―
―
2-5Q1A
Pulsed (Note 1)
(Tc=25℃)
(t
=
10 s)
(Note 2a)
Drain power dissipation
Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
(t
=
10 s)
(Note 2b)
1.6
W
Circuit Configuration
8
7
6
5
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
19
5.5
1.5
150
−55
to 150
mJ
A
mJ
°C
°C
E
AR
T
ch
T
stg
1
2
3
3.5±0.2
Absolute Maximum Ratings
(Ta
=
25°C)
1.1±0.2
0.05 S
0.166±0.05
Low drain-source ON-resistance: R
DS (ON)
= 0.38Ω (typ.)
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-12-21
TPCA8010-H
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
(Tc=25℃)
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2a)
Symbol
R
th (ch-c)
Max
2.78
Unit
°C/W
R
th (ch-a)
44.6
°C/W
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2b)
R
th (ch-a)
78.1
°C/W
Marking
(Note 5)
TPCA
8010-H
*
Type
Lot No.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(a)
(b)
Note 3: V
DD
=
50 V, T
ch
=
25°C (initial), L
=
1mH, R
G
=
25
Ω,
I
AR
=
5.5 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
*
Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2009-12-21
TPCA8010-H
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Drain cutoff current
Symbol
I
GSS
I
DSS
V
(BR) DSS
Drain-source breakdown voltage
V
(BR) DSX
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
Rise time
Turn-ON time
Switching time
Fall time
t
f
t
off
Q
g
Q
gs
Q
gd
Q
sw
V
DD
≈
160 V, V
GS
=
10 V,
I
D
=
5.5 A
t
r
t
on
4.7
Ω
V
GS
10 V
0V
I
D
=
2.7 A
V
OUT
R
L
=
37
Ω
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
=
200 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
= −5
V
I
D
=
10 mA, V
GS
= −20
V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
2.7 A
V
DS
=
10 V, I
D
=
2.7 A
Min
⎯
⎯
200
200
150
2.0
⎯
1.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
0.38
3.9
600
20
220
8
17
13
Max
±10
100
⎯
⎯
⎯
4.0
0.45
⎯
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
⎯
pF
V
Ω
S
V
Unit
μA
μA
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
V
DD
≈
100 V
Duty
≤
1%, t
w
=
10
μs
70
10
7.6
2.4
3.7
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Gate switch charge
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
I
DRP
V
DSF
Test Condition
⎯
I
DR
=
5.5 A, V
GS
=
0 V
Min
⎯
⎯
Typ.
⎯
⎯
Max
11
−2.0
Unit
A
V
3
2009-12-21
TPCA8010-H
I
D
– V
DS
5
Common source 10
Ta
=
25°C
Pulse test
8
6
3
4.8
5.5
5.2
10
Common source
Ta
=
25°C
Pulse test
10
I
D
– V
DS
8
6
5.7
5.5
6
5.2
4
5
4.8
2
VGS
=
4 V
4.5
4
(A)
I
D
Drain current
2
4.5
4.3
1
VGS
=
4 V
0
0
1
2
3
4
5
Drain current
I
D
(A)
0
5
8
0
2
4
6
8
10
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
20
Common source
VDS
=
10 V
Pulse test
5
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
16
(V)
V
DS
Drain-source voltage
4
I
D
(A)
12
3
ID
=
5.5 A
2
2.7
1
1.4
Drain current
8
25
4
100
Ta
= −55°C
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
100
Common source
VDS
=
10 V
Pulse test
10000
Common source
Ta
=
25°C
VGS
=
10 V
Pulse test
R
DS (ON)
– I
D
(S)
Forward transfer admittance
10
Ta
= −55°C
Drain-source ON-resistance
R
DS (ON)
(mΩ)
10
100
|Y
fs
|
1000
1
100
25
100
0.1
0.1
1
10
0.1
1
10
100
Drain current
I
D
(A)
Drain current
I
D
(A)
4
2009-12-21
TPCA8010-H
R
DS (ON)
−
Ta
1000
Common source
VGS
=
10 V
Pulse test
2.7
ID
=
5.5A
1.4
400
100
Common source
Ta
=
25°C
Pulse test
I
DR
−
V
DS
Drain-source ON-resistance
R
DS (ON)
(mΩ)
800
I
DR
Drain reverse current
(A)
10
600
1
10
200
5
3
1
VGS
=
0 V
−0.8
−1.2
0
−80
−40
0
40
80
120
160
0.1
0
−0.4
Ambient temperature
Ta
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
1000
4
V
th
−
Ta
Ciss
V
th
(V)
Gate threshold voltage
(pF)
3
100
Coss
Capacitance
C
2
10
Common source
VGS
=
0 V
f
=
1 MHz
1
0.1
Ta
=
25°C
1
10
100
Crss
1
Common source
VDS
=
10 V
ID
=
1mA
Pulse test
80
120
160
0
−80
−40
0
40
Drain-source voltage
V
DS
(V)
Ambient temperature
Ta
(°C)
Dynamic input/output
characteristics
250
Common source
20
ID
=
5.5 A
Ta
=
25°C
Pulse test
80V
12
(V)
V
DS
Drain-source voltage
150
VDS
100
40V
VDD
=
160V
VGS
8
50
4
0
0
5
10
0
15
Total gate charge
Q
g
(nC)
Gate-source voltage
V
GS
200
16
(V)
5
2009-12-21
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