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HBC556

Description
PNP EPITAXIAL PLANAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size31KB,3 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric View All

HBC556 Overview

PNP EPITAXIAL PLANAR TRANSISTOR

HBC556 Parametric

Parameter NameAttribute value
MakerHSMC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)75
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.5 W
surface mountNO

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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