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S29CD016G0MQAN003

Description
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Categorystorage    storage   
File Size990KB,91 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Download Datasheet Parametric View All

S29CD016G0MQAN003 Overview

16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory

S29CD016G0MQAN003 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSPANSION
Parts packaging codeQFP
package instructionPLASTIC, MO-108CB-1, QFP-80
Contacts80
Reach Compliance Code_compli
ECCN codeEAR99
Maximum access time64 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PQFP-G80
JESD-609 codee0
length20 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width32
Humidity sensitivity level3
Number of functions1
Number of departments/size16,30
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP80,.7X.9,32
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply1.8/3.3,2.6 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height3.35 mm
Department size2K,16K
Maximum standby current0.00006 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)2.75 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width14 mm
S29CD016G
16 Megabit (512 K x 32-Bit)
CMOS 2.5 Volt-only Burst Mode, Dual Boot,
Simultaneous Read/Write Flash Memory
Data Sheet
Distinctive Characteristics
Architecture Advantages
Simultaneous Read/Write operations
— Two bank architecture: large bank/ small bank
— Data can be read from bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
User-Defined x32 Data Bus
Dual Boot Block
— Top and bottom boot sectors in the same device
Flexible sector architecture
— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
sectors
Manufactured on 170 nm process technology
SecSi (Secured Silicon) Sector (256 Bytes)
Factory locked and identifiable:
16 bytes for secure,
random factory Electronic Serial Number; remainder
may be customer data programmed by Spansion™
Customer lockable:
Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
Programmable Burst interface
— Interface to any high performance processor
— Modes of Burst Read Operation:
Linear Burst:
4 double words and 8 double words
with wrap around
Program Operation
— Ability to perform synchronous and asynchronous
write operations of burst configuration register
settings independently
Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD Am29LV and Am29F
and Fujitsu MBM29LV and MBM29F flash memories
Ultra low power consumption
— Burst Mode Read: 90 mA @ 66 MHz max,
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
1 million write cycles per sector typical
20 year data retention typical
VersatileI/O™ control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin
— 1.65 V to 2.75 V compatible I/O signals
— 3.6 V tolerant I/O signals
Software Features
Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector (requires only V
CC
levels)
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
ACC input
— Accelerates programming time for higher throughput
during system production
Package options
— 80-pin PQFP
— 80-ball Fortified BGA
Performance Characteristics
High performance read access
— Initial/random access times as fast as 54 ns
— Burst access time as fast as 9 ns for ball grid array
package
Publication Number
S29CD016_00
Revision
A
Amendment
4
Issue Date
November 5, 2004
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion LLC. Spansion
LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided
“as
is” without warranty or guarantee of any
kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or
statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the use of the information in this document.

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